DDTC122TU-7 Allicdata Electronics
Allicdata Part #:

DDTC122TUDITR-ND

Manufacturer Part#:

DDTC122TU-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC122TU-7 datasheetDDTC122TU-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DDTC122
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Base (R1): 220 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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A DDTC122TU-7 transistor is a type of bipolar junction transistor (BJT), also sometimes referred to as a silicon-controlled rectifier (SCR), that is designed to work with a pre-biased configuration. The device is made up of two p-n junctions which are linked together, one of which is referred to as the collector and the other of which is referred to as the emitter. This type of transistor is capable of controlling large currents with a relatively small signal, and is typically used in power amplification, voltage regulation, and current sensing applications.

The DDTC122TU-7 transistor is designed to operate with a pre-biased configuration, which is known as a half-wave trigger configuration. In this configuration, the collector and emitter both have a voltage applied to them, with the collector being higher than the emitter. When a signal is applied to the base of the transistor, it causes the base-collector junction to become forward-biased, allowing current to flow from the collector to the emitter. This then causes the voltage drop across the collector-emitter junction to increase. This causes the current through the transistor to increase and the collector current to decrease. In this manner, the transistor acts as a switch, allowing current to flow through it with the application of a small signal.

The DDTC122TU-7 transistor is capable of handling large voltages and currents, making it an ideal choice for power amplification and voltage regulation applications. It can also be used in current sensing applications, as it is capable of accurately detecting and responding to relatively small changes in current. The transistor is also well-suited for use in motor control applications, as its fast switching speeds allow it to quickly and accurately respond to changes in motor speed.

The DDTC122TU-7 transistor is also designed to be resistant to electrical noise. This makes it a popular choice for applications that require a high level of immunity to electrical noise, such as automotive electronics. Additionally, the transistor is relatively easy to integrate into a circuit due to its low input capacitance and relatively low ON resistance.

In summary, the DDTC122TU-7 transistor is a type of bipolar junction transistor (BJT) designed to operate with a pre-biased configuration. It is capable of handling large currents with a relatively small signal, and is typically used in power amplification, voltage regulation, and current sensing applications. Additionally, the transistor is resistant to electrical noise and is relatively easy to integrate into a circuit due to its low input capacitance and relatively low ON resistance.

The specific data is subject to PDF, and the above content is for reference

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