DDTC114TCA-7 Allicdata Electronics
Allicdata Part #:

DDTC114TCADITR-ND

Manufacturer Part#:

DDTC114TCA-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC114TCA-7 datasheetDDTC114TCA-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: DDTC114
Description

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The DDTC114TCA-7 is a single pre-biased transistor, which has been specifically designed for applications requiring a NPN Bipolar Junction Transistor (BJT) with a pre-biased emitter configuration. This device is well suited for a range of applications including signal switching, instrumentation, and computer power-supply control. The DDTC114TCA-7 offers low power and high-speed operation while providing protection against static electricity.

A basic BJT is composed of three layers of semiconductor material. These layers are called the base, the collector and the emitter. A small electrical current applied to the base can control the amount of current flowing between the collector and the emitter. A pre-biased BJT contains an individual voltage bias applied across the base-emitter junction. This voltage bias provides protection from static electricity and facilitates faster switching time and lower power consumption.

The DDTC114TCA-7 is designed for use in applications requiring a fast switching transistor. It offers a low between 0.2 and 0.9 volt base-emitter voltage drop with a 0.96 volt collector-emitter saturation voltage when operating in a range of 12 Volts DC. Since the transistor is pre-biased, it can be used in both linear and digital applications.

The DDTC114TCA-7 allows the user to control the forward current flowing between the collector and the emitter through a closed loop feedback control. The control loop uses an external voltage reference source to compare the emitter voltage to the reference. When the emitter voltage is greater than the reference, the current through the transistor is shut off. The lower the voltage reference, the lower the current will be for a given reference. The same current through the transistor can also be changed by increasing or decreasing the collector current. This strongly encourages conservation of power and can improve switching speed.

The DDTC114TCA-7 is particularly useful in applications requiring an individual voltage bias applied across the base-emitter junction. This ensures protection from static electricity, which can damage the transistor if left unchecked. This level of protection also allows for fast switching times and lower power consumption, which is often critical when applied in instrumentation or computer power supplies. The device is also supplied with a cantilever mount, which provides fast and easy mounting and maintenance of the transistor.

The DDTC114TCA-7 provides excellent performance in a range of applications, primarily owing to its pre-biased emitter configuration. It also offers low power consumption, high-speed operation and protection from static electricity. This makes it an excellent choice for signal switching, instrumentation and computer control applications where low power consumption and quick switching speed are paramount.

The specific data is subject to PDF, and the above content is for reference

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