DDTC143XCA-7-F Allicdata Electronics
Allicdata Part #:

DDTC143XCA-FDITR-ND

Manufacturer Part#:

DDTC143XCA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC143XCA-7-F datasheetDDTC143XCA-7-F Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DTC143
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC143XCA-7-F is a single, pre- biased bipolar junction transistor (BJT). It is a popular device offering many positive characteristics, making it applicable in a wide array of applications.

A BJT is a type of transistor that consists of two PN-junctions sharing a common base region. It composed of base, emitter and collector. When current is applied to the base, electrons are drawn to the collector, creating a flow of electricity. The NPN type DDTC143XCA-7-F has an injected voltage between the base and collector, as built by the manufacturer.

The DDTC143XCA-7-F is designed for high frequencies and has a voltage rating of 40V, a power dissipation of 25W, a collector-emitter voltage of 25V, a collector current of 0.2A, and a collector power dissipation of 8W. These characteristics make it a suitable choice for a variety of low-power applications.

The DDTC143XCA-7-F can be used in switching and control applications. Its integrated pre-biased internal structure allows it to switch quickly, and its low power dissipation makes it ideal for use in low power circuits such as sensors, drivers, and push-pull configurations. This pre-biased structure also makes it suitable for use in high frequency applications such as radio, RF amplifiers, audio amplifiers, and telecom systems. Additionally, its low voltage design and switching speed make it ideal for use in consumer electronics like TV sets, computers, and cellular phones.

The BJT has three important physical characteristics: current gain, which is the ratio of the collector current to the base current; muting factor, which is the ratio of the collector current to the base resistor; and output impedance, which is the ratio of the collector voltage to the output current. All these characteristics come together to determine the functionality of a transistor. The values of these characteristics, along with the device’s size and cost, help to decide how well it will perform in any given application.

In addition to its pre-biased internal structure, the DDTC143XCA-7-F also has a variety of protective modules for added safety. These modules help to protect the device from thermal, electrical, and mechanical stress, allowing it to be used in difficult environments without fail.

In conclusion, the DDTC143XCA-7-F is a versatile and reliable single pre-biased bipolar junction transistor that is suitable for use in a wide array of applications ranging from low-power switching and control circuit designs to RF amplifiers, audio amplifiers, and telecom systems. Its integrated pre-biased structure, low voltage design and switching speed, along with its assortment of protective modules, all make the DDTC143XCA-7-F the ideal choice for reliable performance in difficult conditions.

The specific data is subject to PDF, and the above content is for reference

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