Allicdata Part #: | DDTC113ZE-FDITR-ND |
Manufacturer Part#: |
DDTC113ZE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC113ZE-7-F Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DDTC113 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC113ZE-7-F is a single, pre-biased, bipolar junction transistor (BJT) that is ideal for applications in any number of settings, including but not limited to consumer electronics, industrial control, and telecommunications. It can be used as an amplifier, voltage regulator, switch, and many more of these types of applications.
The main components of the transistor include the base, collector, and emitter. The base is made up of three parts; an n-type semiconductor, a p-type semiconductor, and a conducting electrode. The collector and emitter are made up of two p-type semiconductors and a conducting electrode, respectively. The n-type semiconductor is connected to a voltage source that supplies current to the transistor. This current is then fed through the other components of the transistor.
The primary purpose of the base is to control the current through the transistor. When a current is applied to the base, it causes a change in the electrical field between the collector and emitter and causes electrons to flow between them. This then controls the current that is flowing through the transistor.
The DDTC113ZE-7-F has a pre-biased configuration, which means that it is already configured for a specific voltage level. This pre-biased configuration eliminates the need for additional components, such as a bias resistor, to be connected to the transistor, thus simplifying the circuit design.
Another advantage of the DDTC113ZE-7-F is its relatively low power consumption, as compared to other types of transistors. It only consumes a few milliamps of current, which makes it ideal for low-power applications. It also has a low voltage drop, which reduces power losses that can occur in certain conditions.
The DDTC113ZE-7-F can be used in a variety of applications due to its flexibility and low power consumption. It can be used as an amplifier, voltage regulator, switch, and many more of these types of applications. For example, it can be used in a switch to control the flow of current in a circuit, as well as in an amplifier to increase the voltage or power in a circuit. It can also be used in a voltage regulator to prevent the voltage of a system from fluctuating too much.
The DDTC113ZE-7-F is a single, pre-biased, bipolar junction transistor that is ideal for a variety of applications. Its low power consumption and pre-biased configuration make it an ideal component for many types of systems. Its flexibility also makes it an ideal choice for many types of applications, as it can be used as an amplifier, voltage regulator, switch, and many more of these types of applications.
The specific data is subject to PDF, and the above content is for reference
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