DDTC113ZE-7-F Allicdata Electronics
Allicdata Part #:

DDTC113ZE-FDITR-ND

Manufacturer Part#:

DDTC113ZE-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC113ZE-7-F datasheetDDTC113ZE-7-F Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DDTC113
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Series: --
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTC113ZE-7-F is a single, pre-biased, bipolar junction transistor (BJT) that is ideal for applications in any number of settings, including but not limited to consumer electronics, industrial control, and telecommunications. It can be used as an amplifier, voltage regulator, switch, and many more of these types of applications.

The main components of the transistor include the base, collector, and emitter. The base is made up of three parts; an n-type semiconductor, a p-type semiconductor, and a conducting electrode. The collector and emitter are made up of two p-type semiconductors and a conducting electrode, respectively. The n-type semiconductor is connected to a voltage source that supplies current to the transistor. This current is then fed through the other components of the transistor.

The primary purpose of the base is to control the current through the transistor. When a current is applied to the base, it causes a change in the electrical field between the collector and emitter and causes electrons to flow between them. This then controls the current that is flowing through the transistor.

The DDTC113ZE-7-F has a pre-biased configuration, which means that it is already configured for a specific voltage level. This pre-biased configuration eliminates the need for additional components, such as a bias resistor, to be connected to the transistor, thus simplifying the circuit design.

Another advantage of the DDTC113ZE-7-F is its relatively low power consumption, as compared to other types of transistors. It only consumes a few milliamps of current, which makes it ideal for low-power applications. It also has a low voltage drop, which reduces power losses that can occur in certain conditions.

The DDTC113ZE-7-F can be used in a variety of applications due to its flexibility and low power consumption. It can be used as an amplifier, voltage regulator, switch, and many more of these types of applications. For example, it can be used in a switch to control the flow of current in a circuit, as well as in an amplifier to increase the voltage or power in a circuit. It can also be used in a voltage regulator to prevent the voltage of a system from fluctuating too much.

The DDTC113ZE-7-F is a single, pre-biased, bipolar junction transistor that is ideal for a variety of applications. Its low power consumption and pre-biased configuration make it an ideal component for many types of systems. Its flexibility also makes it an ideal choice for many types of applications, as it can be used as an amplifier, voltage regulator, switch, and many more of these types of applications.

The specific data is subject to PDF, and the above content is for reference

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