DDTC114YCA-7-F Discrete Semiconductor Products |
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Allicdata Part #: | DDTC114YCA-FDITR-ND |
Manufacturer Part#: |
DDTC114YCA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC114YCA-7-F Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | DDTC114 |
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A DDTC114YCA-7-F is a type of bipolar junction transistor (BJT). Specifically, it is a single, pre-biased transistor, meaning that its electrical bias has already been established prior to the use of the device. A BJT uses a two-layer bed of semi-conductive material for its circuitry, allowing electrons to pass through it with certain restrictions. Transistors such as the DDTC114YCA-7-F are shaped in a particular way, and have three terminals, known as the base, the emitter, and the collector. These components are arranged in such a way that the electrons can only pass through the transistor with the application of a voltage.
These types of transistors can be used in a variety of application fields. For example, they can be used in linear amplifiers, which involve the conversion of electrical signals into amplified signals. They can also be used in power regulation and frequency control, as well as in signal switching. In fact, transistors of this type are the most frequently used type of transistor in device design and implementation.
In terms of their working principles, DDTC114YCA-7-F transistors rely on their base-emitter junction for operation. When a voltage is applied to the base of a transistor of this type, it increases the level of current that can flow through the base-emitter junction. This, in turn, will cause the current through the collector-emitter junction to increase or decrease, depending on the type of transistor used. This then allows the output of the device to be varied, depending on the type of transistor used.
Furthermore, DDTC114YCA-7-F transistors are capable of handling higher power levels than other types of transistors. This is because the base-emitter junction is able to handle more current than the collector-emitter junction. The DDTC114YCA-7-F is therefore well suited for applications that require higher power levels. In addition, these types of transistors are also suitable for applications requiring lower power levels, owing to the efficiency of the base-emitter junction.
Overall, DDTC114YCA-7-F transistors are a popular type of transistor thanks to their versatility and reliability. They can be used in a variety of application fields, and are easy to implement. Furthermore, they are capable of handling higher levels of power than other transistors, making them an ideal choice for applications that require higher power levels.
The specific data is subject to PDF, and the above content is for reference
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