DDTC114YCA-7-F Allicdata Electronics

DDTC114YCA-7-F Discrete Semiconductor Products

Allicdata Part #:

DDTC114YCA-FDITR-ND

Manufacturer Part#:

DDTC114YCA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC114YCA-7-F datasheetDDTC114YCA-7-F Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: DDTC114
Description

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A DDTC114YCA-7-F is a type of bipolar junction transistor (BJT). Specifically, it is a single, pre-biased transistor, meaning that its electrical bias has already been established prior to the use of the device. A BJT uses a two-layer bed of semi-conductive material for its circuitry, allowing electrons to pass through it with certain restrictions. Transistors such as the DDTC114YCA-7-F are shaped in a particular way, and have three terminals, known as the base, the emitter, and the collector. These components are arranged in such a way that the electrons can only pass through the transistor with the application of a voltage.

These types of transistors can be used in a variety of application fields. For example, they can be used in linear amplifiers, which involve the conversion of electrical signals into amplified signals. They can also be used in power regulation and frequency control, as well as in signal switching. In fact, transistors of this type are the most frequently used type of transistor in device design and implementation.

In terms of their working principles, DDTC114YCA-7-F transistors rely on their base-emitter junction for operation. When a voltage is applied to the base of a transistor of this type, it increases the level of current that can flow through the base-emitter junction. This, in turn, will cause the current through the collector-emitter junction to increase or decrease, depending on the type of transistor used. This then allows the output of the device to be varied, depending on the type of transistor used.

Furthermore, DDTC114YCA-7-F transistors are capable of handling higher power levels than other types of transistors. This is because the base-emitter junction is able to handle more current than the collector-emitter junction. The DDTC114YCA-7-F is therefore well suited for applications that require higher power levels. In addition, these types of transistors are also suitable for applications requiring lower power levels, owing to the efficiency of the base-emitter junction.

Overall, DDTC114YCA-7-F transistors are a popular type of transistor thanks to their versatility and reliability. They can be used in a variety of application fields, and are easy to implement. Furthermore, they are capable of handling higher levels of power than other transistors, making them an ideal choice for applications that require higher power levels.

The specific data is subject to PDF, and the above content is for reference

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