Allicdata Part #: | DDTC142JUDITR-ND |
Manufacturer Part#: |
DDTC142JU-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC142JU-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.04823 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DTC142 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 470 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC142JU-7 is a single, pre-biased BJT transistor that finds application in a variety of consumer, industrial and even aerospace applications. Designed to switch both low and high power and provide good linearity, the DDTC142JU-7 can also be used to amplify large signals. It is an NPN type bipolar transistor which is constructed from a P-type semiconductor substrate and an N-type collector layer. A base layer is formed by implanting an N-type impurity. The N-type collector is connected to the N-type impurity, forming a junction of two oppositely doped layers.
The basic principle of operation of the DDTC142JU-7 is based around the transfer of minority carriers from the base layer to the collector layer. This occurs when the base-emitter voltage of the transistor is increased above the certain threshold. When this occurs, electron-hole pairs are generated in the base layer and these electrons are then swept into the collector layer. This results in a current flowing through the transistor and through the circuit. The collector current (Ic) is therefore dependent on the base current (Ib), which makes the transistor a current controlled device.
Another important feature of the DDTC142JU-7 is its pre-biased operation. This means that the transistor is biased to a certain voltage when initially powered on. This feature allows the transistor to operate more efficiently with less input current, making the DDTC142JU-7 a good choice for low power applications.
The DDTC142JU-7 can be used in a variety of applications, including signal amplification, signal switching, power control, and power supply regulation. It is particularly useful in low-noise and high-linearity applications due to its low noise figure, low distortion, and high gain. Additionally, the DDTC142JU-7 is well suited for use in high-temperature and high-frequency applications.
In summary, the DDTC142JU-7 is a single, pre-biased NPN bipolar transistor which is designed for use in a variety of applications. It operates using basic principles of minority carrier transfer from the base to the collector layer, providing good linearity and control of current levels in the circuit. Its pre-biased operation allows the DDTC142JU-7 to operate more efficiently than other transistors, making it a good choice for low power applications.
The specific data is subject to PDF, and the above content is for reference
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