
Allicdata Part #: | DDTC143TKA-7-F-ND |
Manufacturer Part#: |
DDTC143TKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 2.5mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59-3 |
Base Part Number: | DTC143 |
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The DDTC143TKA-7-F is a single, pre-biased, bipolar junction transistor (BJT). It is designed for use in a variety of applications and circuits, and is commonly used in power supply, amplifier, and switching applications.
The DDTC143TKA-7-F employs an NPN type configuration, which means it is a current-polarity device that produces a positive output when connected to a positive voltage source. The transistor consists of an emitter, base, and collector, which provide the transistor with the necessary current gain to amplify signals. The emitter serves as the current source while the collector acts as the load on the transistor.
The pre-biased configuration of the DDTC143TKA-7-F allows it to be used in both switching applications as well as linear applications. When used in a switching application, the transistor acts as an on-off switch, allowing for current to flow through the transistor when it is “on,” and blocking the current from flowing when it is “off.” In a linear application, however, the transistor operates in a “linear” or “constant-current” mode, allowing for current to flow through the transistor in a continuous, linear manner.
The DDTC143TKA-7-F utilizes a PN junction, which is the basic building block of a bipolar transistor. A PN junction is created by the diffusion of positive charge carriers (holes) and negative charge carriers (electrons) into a semiconductor material. When biased, a PN junction is capable of producing current gain, allowing the transistor to amplify signals. The longer the PN junction, the higher the current gain.
The DDTC143TKA-7-F is rated for a collector to emitter voltage of 40V and a collector to emitter saturation current of 100mA. It also has a Maximum Collector Current (IC) rating of 1000mA and can switch up to 2.5A of collector current. The maximum Collector-Emitter Voltage (VCE) rating of the part is 45V.
The DDTC143TKA-7-F has a few other features that make it an ideal choice for a wide range of applications. Its low leakage current rating makes it well-suited for use in high-current switching and linear applications. The device also has a low power dissipation rating, making it ideal for low-noise, low-power applications. Finally, the part has a minimum on-state output impedance, allowing it to provide secure connections even under high switching loads.
In summary, the DDTC143TKA-7-F is a single, pre-biased, bipolar junction transistor (BJT) designed for a variety of applications. It features a PN junction with a collector to emitter voltage rating of 40V, a collector to emitter saturation current of 100mA, maximum collector current rating of 1000mA, and a VCE rating of 45V. The device’s low leakage current rating, low power dissipation rating, and minimum on-state output impedance make it a versatile and reliable choice for a wide range of applications.
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