DDTC144GE-7

DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Base Part Number:	DDTC144
Supplier Device Package:	SOT-523
Package / Case:	SOT-523
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Discontinued at Digi-Key
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
DDTC144GE-7 is a pre-biased Single Bipolar Junction Transistor (BJT) designed for use in a wide variety of applications in automotive, industrial, telecom, and consumer markets. It is based on proven, reliable silicon-junction technology, which ensures low manufacturing costs, superior quality and improved operational lifetime. This is a high-performance, low-power device with an operating voltage range of 10-25 volts and an operating junction temperature range of -55°C to +175°C. This device also has a typical industry-standard SOT-223 package that fits all standard PCBs.
Application Field
The DDTC144GE-7 offers high-performance, reliability and low power consumption for applications where it fits best. Accordingly, it is primarily used for a wide range of applications, including the following:

• Automotive - Semiconductor-based ECUs and On-Board Computers.
• Industrial - Robotics and Process Automation.
• Telecommunications - Smartphones, Routers and Switches.
• Consumer - Home Automation and Networking.

The device has a wide range of compatible equipment and machines, such as routers, switches, computers, and other semiconductor elements, making it universal and highly compatible with a multitude of solutions. Additionally, its low power requirements allow it to also be used in battery-powered and/or power-limited applications.
Working Principle
The DDTC144GE-7 is a bipolar junction transistor device which has three terminals. The base (B) terminal is used to control the current between the emitter (E) and collector (C) terminals. The transistor amplifies the input current or voltage applied to the base terminal and applies a corresponding output to the collector terminal.The collector (C) terminal controls the on-state current and produces a larger current from the emitter (E) terminal when the transistor is in the on-state. The transistor also has an off-state current from the collector (C) terminal which can be controlled by changing the bias applied to the base (B) terminal. The voltage or current applied to the base (B) terminal will make the transistor switch between the on and off states.The DDTC144GE-7 has a very low operating voltage of 10 – 25 V and an excellent switching speed. It has an on-state current of 1mA (typical) and an off-state current of 1µA (typical). The device has a breakdown voltage of 100 V and a power dissipation of 200 mW per device.
Conclusion
DDTC144GE-7 is a pre-biased single bipolar junction transistor device that is designed for use in a wide variety of applications. It is based on proven and reliable silicon-junction technology, which ensures low manufacturing costs, superior quality and improved operational lifetime. The device has a wide range of compatible equipment, machines, and other devices making it very universal and widely used in various applications. It offers high-performance and reliable switching with low power consumption and is suitable for use in automotive, industrial, telecom, and consumer markets.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description