DDTC123TCA-7-F Allicdata Electronics
Allicdata Part #:

DDTC123TCA-FDITR-ND

Manufacturer Part#:

DDTC123TCA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC123TCA-7-F datasheetDDTC123TCA-7-F Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: DDTC123
Description

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The DDTC123TCA-7-F is a type of single pre-biased bipolar junction transistor (BJT), designed for general purpose applications. It is often found in power switching, audio amplifying, and radio frequency (RF) applications. This type of transistor has been developed over time to improve its reliability, speed, power dissipation, and current drive capabilities while maintaining a small size - all of which are desirable when producing sound and music.

BJTs are three-terminal devices composed of two PN junctions in the same crystal. The base is the connection between the emitter and collector terminals and it controls the amount of current flowing through the emitter and collector. A base current can control a larger emitter-collector current, which allows the device to amplify signals. The DDTC123TCA-7-F has a maximum collector-emitter voltage of 80V.

The DDTC123TCA-7-F is a very reliable and efficient pre-biased BJT. One advantage of having this pre-biased transistor is that it avoids distorting the input signal, as the bias voltage is already set. This allows the output signals to remain strong and free of distortion. Additionally, this type of transistor enables fast switching of the collector current on and off.

The working principle of the pre-biased DDTC123TCA-7-F is relatively straightforward. When the transistor is turned on, electrons flow from the emitter to the collector. The current gain of the DDTC123TCA-7-F is determined by the ratio of collector current to base current. With the transistor in the "on" state, the collector current is much larger than the base current, resulting in a high current gain.

The DDTC123TCA-7-F transistor is ideal for applications where a large current gain is desired, such as audio amplifying and RF applications. Additionally, its pre-biased nature makes it an ideal choice for applications where distortion is undesirable. This is because the bias voltage is already preset at the factory and does not need to be adjusted in the circuit.

In conclusion, the DDTC123TCA-7-F transistor is an excellent choice for power switching, audio amplifying, and RF applications. It is a reliable and efficient pre-biased BJT that offers the advantages of a high current gain and distortion-free signals. It is a great choice of transistor for any application that requires amplified signals and switched power.

The specific data is subject to PDF, and the above content is for reference

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