DDTC143ZE-7-F Allicdata Electronics
Allicdata Part #:

DDTC143ZE-7-FDITR-ND

Manufacturer Part#:

DDTC143ZE-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC143ZE-7-F datasheetDDTC143ZE-7-F Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 3000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DTC143
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTC143ZE-7-F is a single, pre-biased bipolar junction transistor (BJT) that is ideal for industrial, professional, and consumer SBCs where reliable performance in limited space is required.

A bipolar junction transistor is a type of electronic component typically used for amplifying and switching electronic signals. It consists of three layers of semiconductor material, each layer containing different levels of doping.

Each layer is made up of either p-type or n-type material. The amount of doping determines the amount of current that can be passed through a transistor\'s junction without conduction stopping.

The DDTC143ZE-7-F is an NPN bipolar junction transistor with a collector-emitter voltage of 25V. It has a power dissipation rating of 0.500W, and a collector-emitter saturation voltage of 2V max.

The DDTC143ZE-7-F also has a minimum and typical gain of 660 and 1000, respectively. The typical DC current gain of 6000 at VCE = 5V and IC = 500mA also helps to make the DDTC143ZE-7-F an ideal choice for pre-biased applications.

One of the main benefits of the DDTC143ZE-7-F is that it is pre-biased, meaning that the base-emitter junction is already forward-biased and ready for use. This eliminates the need for a separate bias supply and reduces the cost of the overall design.

The DDTC143ZE-7-F can be used in a wide range of applications, such as power converters, audio amplification, switching regulators, baseband and RF amplifiers, and DC-to-DC controllers.

The working principle of the DDTC143ZE-7-F can be described using the following function: It amplifies the current of the small signal applied at its base. This amplified current then flows from the collector to the emitter.

As a bipolar junction transistor, the DDTC143ZE-7-F operates in one of two modes: active and saturation modes. In active mode, the transistor is used for amplification, while in saturation mode it is used for switching.

The DDTC143ZE-7-F can typically be found in consumer products such as DVD players, home theater systems, and computer systems. It is also ideal for automotive, medical, and industrial applications due to its reliable performance in limited space and its low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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