DDTC113TUA-7-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A DDTC113TUA-7-F transistor is a single, pre-biased Junction Transistor (BJT). This device offers low thermal resistance, a wide operating temperature range, and low reverse leakage.The transistor is a three-terminal electronic device, with current acting as a control element. BJTs are composed of two junction diodes, as well as three layers of semiconductor material. From that perspective, the inner layer is formed by the electrons of the base, and the outside layers are the middle and collector.The DDTC113TUA-7-F is one such example of a BJT, with an available collector current of 5 A and a maximum power dissipation capacity of 2.7 W. It also requires a collector-emitter voltage of 25 V minimum and a collector-base voltage of 12 V minimum. The current gain is 150 hFE minimum at 100 mA collector current.This particular BJT can also reach high temperature ranges, up to a maximum of 175°C. It has a total package size of 12.7mm x 8.9mm, with lead spacing of 2.54mm.The DDTC113TUA-7-F is primarily used in automotive applications, where its isolation is an important feature. It can be found in power supplies and other voltage regulating circuits, DC-DC converters, and audio systems.The working principle of the DDTC113TUA-7-F is relatively common across all BJTs. When a voltage is applied between the base and the emitter, the current starts flowing through it. This is called the Base Emission current, and it controls the current flowing through the rest of the transistor, allowing it to be used as an amplifier.The transistor is configured in such a way that the base-emission current is usually not high enough to cause the emitter-collector current to pass as a result. Thus, a “pre-biased” situation is created. The voltage applied at the base changes the control current, allowing the collector current to increase, and ultimately providing the necessary amplification.In summary, the DDTC113TUA-7-F is a pre-biased, single Junction Transistor with a variety of automotive applications. Its current gain is 150 hFE minimum at 100 mA, with a collector current of 5 A and a maximum allowable temperature of 175°C. The working principle of the DDTC113TUA-7-F is based on the control of the Base Emission current, allowing it to be used as an amplifier.

The specific data is subject to PDF, and the above content is for reference