Allicdata Part #: | DDTC113TUADITR-ND |
Manufacturer Part#: |
DDTC113TUA-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC113TUA-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.04823 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTC113 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC113TUA-7 is a single, pre-biased transistor with both NPN and PNP components, commonly known as a Bipolar Junction Transistor (BJT) as well as a Dual Differential Transistor (DDT). The DDTC113TUA-7 was originally designed by ON Semiconductor in the late 1990s. This technology provides designers with a monolithic, high-gain, integrated switch solution suitable for a variety of design applications.
The DDTC113TUA-7 is primarily used as a power switch or amplifier. With an operating power range of up to 5.5V, this device is well-suited for a variety of power supply applications. It is also used in switching circuits and power amplifiers to achieve the desired gain levels in demanding environments. Additionally, it can be used as a replacement for BJT and FET transistors in some design applications.
The DDTC113TUA-7 comprises two dissimilar building blocks: an NPN Darlington transistor and a PNP Darlington transistor. The NPN transistor generates the signal, while the PNP transistor controls the output. The two building blocks are arranged on either side of a substrate and biased together using a well-controlled pre-bias voltage that provides excellent signal control. The pre-bias structure prevents the transistors from entering a linear region, ensuring the highest possible switching dynamic range.
The DDTC113TUA-7 offers a variety of advantages for design engineers. It has very low input voltage requirements, eliminating the need for large external power sources. This can help reduce board space and simplify the power circuitry design. Additionally, the DDTC113TUA-7 features low noise operation and fast switching, making it ideal for a range of high-speed applications. Moreover, its low power dissipation helps improve the device’s efficiency.
The DDTC113TUA-7 is an excellent choice for switching and power amplification applications. Its highly integrated monolithic structure, low power requirements, and fast performance make it a reliable and cost-effective solution for a variety of design environments.
The specific data is subject to PDF, and the above content is for reference
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