DDTC113TE-7 Allicdata Electronics
Allicdata Part #:

DDTC113TEDITR-ND

Manufacturer Part#:

DDTC113TE-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC113TE-7 datasheetDDTC113TE-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05530
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DDTC113
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Series: --
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Today’s technology is constantly advancing, which includes the current array of transistors. One such transistor is the DDTC113TE-7, which is a pre-biased single bipolar junction transistor (BJT). This type of transistor operates utilizing a powerful collector-emitter current, which is directed through a base, allowing an electrical gate to allow the passage of both electrons and holes. Because of this, it is highly efficient when it comes to transferring electric current.

The DDTC113TE-7 pre-biased single bipolar junction transistor can be used in a variety of applications, such as in computers, electronic devices, and in electric circuits. It can also be used as a switch in order to control the flow of current between two separate circuits. Furthermore, it can be utilized in various other applications which require a reliable, high-power transistor with low turn-on and off times, such as power amplifiers, audio systems, and power converters. Additionally, because this transistor has a high thermal stability and improved response time, it can be used for high-frequency applications, such as radios and television. Finally, its low voltage drop makes it ideal for low-power applications, such as telecommunications.

The DDTC113TE-7 operates with a working principle that involves a bipolar configuration, which is defined as two connections between the base, the emitter, and the collector. Its collector is able to both reject and amplify the input signal, while the emitter will pass through the amplified version of the signal. Furthermore, by having a pre-biased single bipolar junction transistor configuration, it is able to easily switch between two different operating states. This makes it ideal for electrical devices operating at high voltages and low currents, as well as for high-frequency applications, due to its ability to tolerate high voltages without becoming subject to breakdown.

The DDTC113TE-7 is an integral component in many of the electronics within our daily lives. Its pre-biased single bipolar junction transistor setup allows it to be used in a wide range of applications and provides exceptional performance. Furthermore, its low turn-on and off times, high thermal stability, and low voltage drop make it ideal for a number of different electronic applications. Consequently, the DDTC113TE-7 pre-biased single bipolar junction transistor continues to be one of the most reliable and efficient transistors available today.

The specific data is subject to PDF, and the above content is for reference

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