DDTC142TE-7

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The DDTC142TE-7 is a single pre-biased transistor manufactured by ON Semiconductor. It is a silicon pre-biased, NPN transistor housed in a TO-220 package. The DDTC142TE-7 is part of ON Semiconductor’s family of high-performance transistors that offers high-performance characteristics and reliability. The transistor is designed to be used in high-frequency and high-current circuits, such as in automotive applications. It is also used in applications that require high levels of gain and switching, such as in switching mode power supplies.

The DDTC142TE-7 is a low-voltage, low-power device designed to operate in the voltage range of 3 V to 24 V. The device features a maximum current rating of 1.11 A. It has a maximum power dissipation of 500 mW and a thermal resistance of 17.1°C/W. The device is able to provide a high gain of 300 (at Ic=10 mA and Vce=0.4 V). The device also features a maximum collector, emitter, and base voltage of 300 V, 150 V, and 9 V respectively.

The DDTC142TE-7 features a robust construction with a high breakdown voltage, high-energy gain, and a stable operation. The DDTC142TE-7 is a pre-biased transistor that is biased at the collector, emitter, and base level before it is shipped. Pre-biasing allows the user to save time when Calibration and test times when calibrating and testing the device. The device also has a PNP complement, the DDTB142TE-7.

The DDTC142TE-7 operates via bipolar junction technology. In this type of transistor, current is controlled by two junctions created between three semiconductor terminals. One of those terminals is called the base and is the point at which the external control circuit is connected. The other two are called the collector and the emitter. When a small current is applied to the base, it creates a field that is able to control the current flowing between the collector and the emitter.

When a voltage is applied between the collector and the emitter, a current is created between them. This current is called the collector current, and is proportional to the voltage applied. The amount of collector current is proportional to the amount of current flowing into the base. The gain of the transistor is given by the ratio of the collector current to the base current. As the gain increases, so does the power dissipated by the transistor.

The DDTC142TE-7 is typically used in high-frequency and high-power circuits, including automotive applications. It is also used in switching applications, such as in power supplies. The high-speed switching of the device allows it to be used in circuits that require fast switching, such as in Buck converters. The device is also well suited for use in audio amplifiers, given its high-performance characteristics.

In summary, the DDTC142TE-7 is a single pre-biased transistor manufactured by ON Semiconductor. It is designed to offer high-performance characteristics and reliability and is used in a variety of high-frequency and high-power circuits, such as in switching power supplies, audio amplifiers, and automotive applications. The pre-biased transistor is biased at the collector, emitter, and base level before it is shipped and operates via bipolar junction technology, where current is controlled by two junctions created between three semiconductor terminals.

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