Allicdata Part #: | DDTC123EE-FDITR-ND |
Manufacturer Part#: |
DDTC123EE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC123EE-7-F Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Base Part Number: | DDTC123 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 5V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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A DDTC123EE-7-F is a type of transistor, specifically a pre-biased, single bipolar junction transistor (BJT). This particular device is produced by IGBT manufacturer, IXYS, and is an NPN transistor rated for 1A and 40V, making it particularly useful for the automotive industry and applications with similar power requirements.
Overview
The DDTC123EE-7-F is an advanced transistor which combines low power consumption, low noise, and excellent reliability in a single package. It is capable of operating at temperatures up to 175°C and has an integrated protective diode for reverse overvoltage protection.
The DDTC123EE-7-F is designed for use in low power applications, such as automotive electronics and power amplifier controls. It is an ideal transistor for use in mobile phones, laptops, and other consumer electronics due to its low power consumption, low noise, and stable operation.
Working Principle
The DDTC123EE-7-F operates in accordance with traditional BJT principles: a layer of n-type semiconductor material (the base) is sandwiched between an emitter and a collector. When a current is applied to the emitter, electrons are released and pass through the base, forming a region of negative charges. This in turn attracts the positively charged holes in the collector, allowing the transistor to control current flow between the emitter and the collector.
The pre-biased technology allows the DDTC123EE-7-F to maintain its operating state without the need for additional bias components. This makes it an ideal choice for space-constrained applications such as automotive electronics and mobile phones.
Efficiency and Reliability
The DDTC123EE-7-F is rated for 1A current and 40V voltage, giving it a maximum power output of 40W. This makes it an ideal choice for small power applications that require high efficiency and reliability. It utilizes pre-biased technology, allowing it to maintain its operating state without the need for additional bias components.
The DDTC123EE-7-F also boasts excellent noise rejection and thermal stability, making it a reliable choice for applications that require a minimum number of components. Its integrated protective diode ensures that it can withstand reverse overvoltage conditions, making it suitable for use in a range of automotive applications.
Conclusion
The DDTC123EE-7-F is a pre-biased, single bipolar junction transistor (BJT) with a maximum current rating of 1A and a maximum voltage rating of 40V. It is an ideal choice for automotive, mobile phone, and laptop applications due to its low power requirements, low noise rejection, and integrated protective diode. Its pre-biased design allows it to maintain its operating state without the need for additional bias components, making it a reliable and efficient choice for low power applications.
The specific data is subject to PDF, and the above content is for reference
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