DDTC113TE-7-F Discrete Semiconductor Products |
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Allicdata Part #: | DDTC113TE-FDITR-ND |
Manufacturer Part#: |
DDTC113TE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC113TE-7-F Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTC113 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC113TE-7-F is a pre-biased, single bipolar junction transistor (BJT) device. It has been designed for both digital and analog applications and is well suited for general-purpose switching and amplification. Its main feature is a built-in bias current source which allows for the regulation of the collector-side current of the device, making it possible to control the output current. The key electrical characteristics of the DDTC113TE-7-F are a collector current range of 10mA to 2A, a maximum collector-emitter voltage of 40V, and a Continuously Variable Gain Bandwidth Product of 3kHz to 30MHz.
The DDTC113TE-7-F is a three-terminal device, consisting of two PN-junctions formed between two semiconductor materials. The two junctions are the emitter junction, where holes move from the emitter to the base region, and the collector junction, where electrons move from the base region to the collector region. The device is internally connected with a bias current source, which is responsible for maintaining a steady current between the emitter and collector junctions. This bias current source is controlled by the external terminal, called the "control port".
The DDTC113TE-7-F has a simple and reliable operation, which makes it ideal for both switching and active device applications. When the voltage applied to the control port is above the base-emitter voltage of the device, the diode connected between the base and emitter terminals becomes conducting, and this current is regulated by the bias current source. As a result, the collector current is relatively stable, allowing for accurate control of the output current. The device is also highly efficient, providing good performance in digital applications.
The DDTC113TE-7-F is an ideal choice for a variety of analog and digital applications. Its fast switching speed, low power consumption, ease of use and compact size make it well suited for use in automotive, telecom, and industrial applications. It can be used as a switch or amplifier in controlling power supplies and other applications, as well as for powering LED lighting, pulse generation and pulse shaping, and in voltage level shifting.
In summary, the DDTC113TE-7-F is a pre-biased, single bipolar junction transistor (BJT) device that is well suited for general-purpose switching and amplification. It has a built-in bias current source which allows for the regulation of the collector-side current of the device, and is highly efficient and reliable. This device has a wide range of applications, including automotive, telecom, and industrial applications, and is an ideal choice for many digital and analog tasks.
The specific data is subject to PDF, and the above content is for reference
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