DDTC123JUA-7 Allicdata Electronics
Allicdata Part #:

DDTC123JUADITR-ND

Manufacturer Part#:

DDTC123JUA-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC123JUA-7 datasheetDDTC123JUA-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DDTC123
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Bipolar junction transistors (BJTs) are semiconductor devices commonly used as amplifiers, switches, or as energy-saving devices. The DDTC123JUA-7 is an example of a single, pre-biased BJT, which is designed to be used in low-power and low-voltage applications in telecommunications, automotive, and industrial and consumer electronics.

The DDTC123JUA-7 is a NPN transistor with three terminals, the collector, base, and emitter. This type of transistor combines two diodes in a four-layer sandwich construction, creating a "bipolar junction." Each junction is on a different type of semiconductor, either n-type or p-type, creating an n-p-n (NPN) arrangement. This type of chip differs from a double p-n or PNP by virtue of the number of p-type and n-type regions, thus giving rise to functionality, not inherent to the transistor.

The pre-biased design of the DDTC123JUA-7 allows for simple and straightforward integration in a variety of applications. Pre-biased transistors are those that are manufactured with a built-in offset voltage applied to the base, so that the device can be powered up and become operational right away. This feature makes it easier to use the device in applications that require it to be able to start up quickly.

Additionally, the DDTC123JUA-7 has a very low voltage drop across its collector-emitter junction (Vce) as compared to other transistors, allowing for more efficient operation. Its low Vce makes it suitable for use in low-power applications.

The main principle behind the DDTC123JUA-7 is commonly referred to as the Emitter Coupled Logic (ECL) transistor logic. This type of logic is based on the controlled current flow between the emitter and the base. When the current flowing through the transistor is increased, the voltage drop across the collector increases. This will cause the collector current to increase, and consequently, the a larger current will flow through the emitter. This allows the user to control the current flow through the transistor, allowing it to be used as an amplifier or switch.

The DDTC123JUA-7 also features a number of protection mechanisms, including a built-in reverse polarity protection circuit, a temperature-compensated temperature sensor, and a thermal shut-off feature. These features protect the device from damage due to extreme conditions, allowing it to function reliably.

In conclusion, the DDTC123JUA-7 is a pre-biased, single, bipolar junction transistor that is suitable for low-power, low-voltage applications. It is based on the Emitter Coupled Logic (ECL) transistor logic, and features a number of protection mechanisms to ensure safe and reliable operation.

The specific data is subject to PDF, and the above content is for reference

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