DDTC143TCA-7-F Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	DTC143

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DDTC143TCA-7-F Application Field and Working Principle

The DDTC143TCA-7-F is a type of bipolar transistor commonly used in switching, amplification and signal processing circuits. It is a single pre-biased transistor, with an external base-collector junction connected to a low-value resistor, allowing it to be pre-biased. As such, it can be used in a variety of applications which require pre-biased transistors.In terms of its structure and physical characteristics, the DDTC143TCA-7-F features a high-voltage silicon NPN transistor in a TO-220 plastic package. It has a total power dissipation of 20 W, a collector current of 25 A and a collector-emitter voltage of 200 V. Its differences to non-pre-biased transistors are its external pre-turned base-collector junction connections, which shift the bias of the collector-emitter voltage.In terms of its operating principle, the DDTC143TCA-7-F is an NPN transistors where electrons flow between the emitter region and an additional pre-biased junction. When a current is applied to the base-collector junction, a voltage drop occurs across the junction, resulting in a higher voltage being generated between the collector and the base. This results in a current flow between the collector and the emitter, with the base-collector junction acting as a controlling element. The current gain of the DDTC143TCA-7-F is mainly determined by the role of the external pre-biased junction, with its collector current being related to the external base-collector junction voltage. When the voltage at the base-collector junction is increased, the collector current increases by a greater amount, resulting in a greater current gain.The advantages of using a pre-biased transistor such as the DDTC143TCA-7-F, is that the chip is pre-separately biased, allowing high gain switching without reliance on an external biasing circuit. The pre-biased transistor will be biased when it is powered, so the pre-biased circuit doesn’t need an additional power source. This means it can be used in areas where a conventional transistor cannot, due to the need to use an external biasing circuit.The DDTC143TCA-7-F is a versatile device which can be implemented in circuits requiring high-gain switching and amplification, as well as pre-biased transistors. Its advantages ensure that it is a popular choice for designers and engineers looking for reliable, high-performance solutions.

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