DDTC144EE-7-F Allicdata Electronics
Allicdata Part #:

DDTC144EE-FDITR-ND

Manufacturer Part#:

DDTC144EE-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC144EE-7-F datasheetDDTC144EE-7-F Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 3000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DDTC144
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC144EE-7-F is a pre-biased single bipolar junction transistor (BJT) that has low power dissipation, high voltage, and good gain linearity. It has a wide variety of uses for applications ranging from semiconductor linear amplifiers to high frequency power switching. This transistor is perfect for applications where both low noise and low distortion are key requirements.

Features

The DDTC144EE-7-F features include:

  • High voltage (up to 60V).
  • Low power (less than 0.3W).
  • Good linearity (gain 3-8dB).
  • High frequency (up to 1600 MHz).
  • Low noise and low distortion.
  • High gate-source and gate-drain capacitance.

Application Field

The DDTC144EE-7-F is perfectly suited for a various range of applications, including:

  • Linear amplifiers.
  • High-frequency power switching.
  • RF and microwave applications.
  • Low-noise operation.
  • Surge and over-temperature protection.
  • Broadband power amplifiers.

Working Principle

The DDTC144EE-7-F operates according to the basic principles of transistor action. This principle relies on three main factors: source, gate, and drain. When a current is applied to the source, it will create a voltage difference between the source and the gate. When this voltage difference reaches a certain threshold, carriers will be attracted to the gate, resulting in a current flowing between the gate and the drain.

This current between the gate and the drain is modulated according to the voltage applied to the gate, which can be used to control the current flowing between the source and the drain. This is the basis for transistor action, which is used in amplifiers and other electronic devices.

Conclusion

In conclusion, the DDTC144EE-7-F pre-biased single bipolar junction transistor is a very versatile and useful device with a variety of applications. It has a low power dissipation, a high voltage, and a good gain linearity, making it a perfect choice for many applications. With its high gate-source and gate-drain capacitance, it is well-suited for use in a variety of RF and microwave applications.

The specific data is subject to PDF, and the above content is for reference

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