
Allicdata Part #: | DDTC144EE-FDITR-ND |
Manufacturer Part#: |
DDTC144EE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DDTC144 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC144EE-7-F is a pre-biased single bipolar junction transistor (BJT) that has low power dissipation, high voltage, and good gain linearity. It has a wide variety of uses for applications ranging from semiconductor linear amplifiers to high frequency power switching. This transistor is perfect for applications where both low noise and low distortion are key requirements.
Features
The DDTC144EE-7-F features include:
- High voltage (up to 60V).
- Low power (less than 0.3W).
- Good linearity (gain 3-8dB).
- High frequency (up to 1600 MHz).
- Low noise and low distortion.
- High gate-source and gate-drain capacitance.
Application Field
The DDTC144EE-7-F is perfectly suited for a various range of applications, including:
- Linear amplifiers.
- High-frequency power switching.
- RF and microwave applications.
- Low-noise operation.
- Surge and over-temperature protection.
- Broadband power amplifiers.
Working Principle
The DDTC144EE-7-F operates according to the basic principles of transistor action. This principle relies on three main factors: source, gate, and drain. When a current is applied to the source, it will create a voltage difference between the source and the gate. When this voltage difference reaches a certain threshold, carriers will be attracted to the gate, resulting in a current flowing between the gate and the drain.
This current between the gate and the drain is modulated according to the voltage applied to the gate, which can be used to control the current flowing between the source and the drain. This is the basis for transistor action, which is used in amplifiers and other electronic devices.
Conclusion
In conclusion, the DDTC144EE-7-F pre-biased single bipolar junction transistor is a very versatile and useful device with a variety of applications. It has a low power dissipation, a high voltage, and a good gain linearity, making it a perfect choice for many applications. With its high gate-source and gate-drain capacitance, it is well-suited for use in a variety of RF and microwave applications.
The specific data is subject to PDF, and the above content is for reference
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