DDTC115TUA-7

The DDTC115TUA-7 is an ESD protection device specifically designed for pre-biased single bipolar transistor (BJT) applications. Developed by Littelfuse, this series features low leakage current, low clamping voltage and fast response time, making it ideal for high-speed and RF applications.

The DDTC115TUA-7 is an ESD protection device consisting of a base-emitter junction and a silicon avalanche diode. The device is designed to provide protection against electrostatic discharges of up to 15 kV, protecting the transistor from static electricity. The device is also designed for low leakage current and low clamping voltage, making it suitable for high-speed applications and RF circuits.

The working principle of the DDTC115TUA-7 is rather simple. When a large surge of electrical current occurs, the base-emitter junction of the transistor is triggered. This deactivates the transistor, allowing the surge current to be diverted to the avalanche diode. The avalanche diode is then activated, clamping the surge current and providing protection to the transistor against excessive current.

Due to its low leakage current and low clamping voltage, the DDTC115TUA-7 is well suited for high-speed applications and RF circuits where the operating frequencies are above 1 GHz. It is also suitable for pre-biased BJT applications, where the base-emitter junction is already biased by externally applied voltages. This allows the device to be used in applications where the operating frequencies are below 1 GHz.

The DDTC115TUA-7 series provides reliable and efficient ESD protection for pre-biased single BJT applications. With low leakage current and low clamping voltage, the device is suitable for high-speed and RF applications, making it an ideal choice for circuit designers. This series of devices is also easy to use and integrates seamlessly into existing circuits.