DDTC114YUA-7-F

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The DDTC114YUA-7-F Transistor is a NPN Bipolar Junction Transistor (BJT) with a Pre-biasing. It's suitable for use in medium power, general purpose, and high-voltage applications. The transistor is designed to allow for high gain, with low saturation voltages, and high switching speeds.

Features

• Collector-Emitter Voltage: -40V to -40V

• Collector-Base Voltage: -60V to -60V

• DC Current Gain (hFE): 800

• Current to Saturation Voltage: 0.2A

• Quiescent Current: 10mA

• Polarity: NPN

Applications

The DDTC114YUA-7-F is designed for use in medium power, general purpose, and high-voltage applications. It's suitable for use in line-by-line switching applications, and can be used to amplify signals from sensors, or to control the speed of motors.

The transistor is also suitable for use in medium voltage power supplies, switch-mode power supplies, lighting control circuits, power inverters, audio amplifiers, motor drivers, and motor control circuits.

Working Principle

The DDTC114YUA-7-F is a NPN, Pre-Biased transistor. This means that it has a base-emitter junction that is "pre-biased" by the application of a voltage across the base-emitter junction. This pre-biasing allows the transistor to operate in a "low-power" mode until current is applied to the base. When current is applied to the base, this bias voltage will allow the transistor to switch on, and the current will flow through the collector-emitter junction.

The transistor will then amplify the base current, causing current to flow through the collector-emitter junction at a higher level than the current applied to the base. This amplification allows the transistor to control the flow of current in a circuit, and can be used to produce an output current

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