Allicdata Part #: | DDTC143TEDITR-ND |
Manufacturer Part#: |
DDTC143TE-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC143TE-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.05530 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DTC143 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 2.5mA |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC143TE-7 is a single pre-biased bipolar transistor—that is, a transistor with a single emitter, collector, and base. It is most frequently used in applications such as audio, amplifiers, RF amplification, and switching. It has a wide variety of applications and is an essential component when it comes to electric circuits.
The DDTC143TE-7 is based on the metal-oxide semiconductor field effect transistor (MOSFET) structure. It is a three-terminal device, with an emitter, collector, and base. The emitter is used to control current passing through the device, while the collector collects current from the emitter and the base to drives it. It can be operated in both linear and switching modes, depending on the application.
The device operates on the principle of current control through the base-to-emitter junction. In a bipolar transistor, this junction forms a capacitive element that can be used to modify the current flow in the transistor. As the current through the base-to-emitter junction is increased, the voltage across the device decreases, and the collector current will increase. This is the basic working principle of the DDTC143TE-7.
The DDTC143TE-7 is most commonly used in applications requiring low-noise amplifiers and switching. The device’s low capacitance makes it an effective choice for RF signals, and the low input impedance it offers allows for high-gain operation. It also has a wide gain bandwidth, with good switching speeds and low power consumption, making it an ideal choice for applications where power efficiency is important.
The device is also popular for its easy assembly. The pre-biased design makes it easy to solder, reducing assembly time and making installation easier than with non-pre-biased transistors. Additionally, it is resistant to thermal breakdown, making it a reliable option for applications requiring heat dissipation.
The DDTC143TE-7 is a versatile and reliable component, and it will continue to remain an important part of electric circuits moving forward. Its easy assembly and robust performance make it an excellent choice for a variety of applications, and its high quality and cost efficiency continue to make it a popular choice among engineers.
The specific data is subject to PDF, and the above content is for reference
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