DDTC143ZCA-7 Allicdata Electronics
Allicdata Part #:

DDTC143ZCADITR-ND

Manufacturer Part#:

DDTC143ZCA-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC143ZCA-7 datasheetDDTC143ZCA-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: DTC143
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The DDTC143ZC-A7 is a single, pre-biased bipolar junction transistor (BJT). A single, pre-biased transistor is a transistor which is biased to operate under a certain condition and the bias current is adjusted to keep the transistor operating in that condition. The DDTC143ZC-A7 is a device which can be used to achieve stable operation in circuits designed to enable the use of a single, pre-biased transistor.

A bipolar junction transistor is a three-terminal semiconductor device which allows electric current to flow between two of its terminals while controlling the current flow through the third terminal. The current is usually transferred from the base to the collector by a single electron (positive charge) and from the collector to the emitter by two electrons (negative charge). This type of transistor is mainly used in medium voltage and power switching applications.

This particular device operates on the NPN type architecture which is a common type of transistor. In this type of architecture, the collector and base terminals of the transistor are connected together, so that the current will flow from the base to the collector when a signal is applied, making it an ideal device for medium-voltage and power switching applications. The DDTC143ZC-A7 has an additional gate terminal which is used to control the current flow from the base to the collector by applying a signal. This signal is used to adjust the bias current for the transistor and keep it operating in the desired condition.

The DDTC143ZC-A7 has a gain bandwidth product of 1.7GHz. This means that the device can handle a maximum frequency of 1.7GHz before the gain starts to drop significantly. The device is also able to handle a maximum collector-emitter voltage of 80V, which makes it suitable for use in a wide variety of applications. The maximum power dissipation, which is another important parameter, is rated at 2 watts, so the device can handle a decent amount of power before it starts to heat up.

The DDTC143ZC-A7 is mainly used in applications where stability and accurate control are important. This type of transistor is ideal for use in signal processing, power regulation and medium power applications. It is also used in applications like amplifiers, switch mode power supplies, radio frequency amplifiers and oscillators. Additionally, it can also be used in low power applications such as switch debouncing and signal conditioning.

In summary, the DDTC143ZC-A7 is a single, pre-biased bipolar junction transistor which can be used in a wide range of applications where stability and accurate control is needed. It has a gain bandwidth product of 1.7GHz and a maximum collector-emitter voltage rating of 80V. The maximum power dissipation is rated at 2 watts, making it suitable for low power applications as well. The device is mainly used in signal processing, power regulation and medium power applications.

The specific data is subject to PDF, and the above content is for reference

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