Allicdata Part #: | DDTC115EE-FDITR-ND |
Manufacturer Part#: |
DDTC115EE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC115EE-7-F Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Base Part Number: | DDTC115 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 100 kOhms |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDTC115EE-7-F is a single pre-biased bipolar junction transistor (BJT). It has been designed to offer a variety of functionalities and is often used in applications such as power management, motor control, and audio amplification. This article will explore the application field and working principle of this device.
The DDTC115EE-7-F is a BJT that features a low collector-emitter saturation voltage of 0.3V, a fast switching speed of 3ns, and an ultra-high gain of 160. It is rated for an average collector current of 1A and can withstand collector-emitter voltage of up to 150V. This device operates in either a common-emitter or a common-collector configuration, with a pulse-width modulation (PWM) range of -3V to +15V. As a single pre-biased BJT, this device has a base-emitter voltage of 1.5V and a collector-emitter voltage of 15V pre-biased on its terminals to reduce the response time.
The DDTC115EE-7-F is used in applications that require fast switching, such as power management and motor control. Due to its high gain, this device can be used to modify the supply voltage of various components in an efficient manner. Furthermore, its low saturation voltage makes it suitable for high-speed switching applications. Moreover, it is often used in audio amplification circuits as a voltage-controlled amplifier due to its high gain and fast response time.
The working principle of the DDTC115EE-7-F is based on the principle of a BJT. When a voltage is applied to the base of the device, it produces a current from the collector to the emitter. This current is proportional to the base voltage and is used to control the current flow across the output terminals. This allows the device to make the voltage of the base and collector terminals follow each other, thus amplifying the output voltage.
In summary, the DDTC115EE-7-F is a single pre-biased bipolar junction transistor (BJT) that is used in applications such as power management, motor control, and audio amplification. It is characterized by its low saturation voltage, fast switching speed, and ultra-high gain. Its working principle is based on the principle of a BJT and it uses a base voltage to control the current flow across the output terminals.
The specific data is subject to PDF, and the above content is for reference
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