DDTC114TE-7-F Allicdata Electronics
Allicdata Part #:

DDTC114TE-FDITR-ND

Manufacturer Part#:

DDTC114TE-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC114TE-7-F datasheetDDTC114TE-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: DDTC114
Description

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The DDTC114TE-7-F is a integrated circuit bipolar transistor that uses a variety of technologies in order to reduce its power consumption and increase its reliability. This makes it highly versatile and applicable in a variety of applications, ranging from amplification and switching to signal processing and telecommunications. As a pre-biased transistor, the DDTC114TE-7-F can serve as either a high-current or low-current device depending on the application. In addition, the DDTC114TE-7-F has a wide voltage range, making it suitable for use in low-voltage and high-voltage applications.

The DDTC114TE-7-F is an NPN-type transistor that offers both a high-side and low-side configuration. For the low-side configuration, the transistor will typically operate as a voltage-fed device. This means that the DDTC114TE-7-F can be used as a switch to control current on the low-side of the voltage input. The NPN-type configuration also allows for the DDTC114TE-7-F to have a low input capacitance, which is ideal for use in signal-processing applications.

The DDTC114TE-7-F exhibits a very low quiescent current, which makes it well-suited for use in low-power applications. The low quiescent current also ensures that the transistor operates at a stable voltage across the entire operating temperature range. The DDTC114TE-7-F also comes with a built-in Beta (current gain) of 130, meaning that it can achieve a large signal boost with minimal current consumption.

The DDTC114TE-7-F is a fully-isolated, self-biased device which comes with a highly efficient thermal shutdown circuit. This thermal shutdown circuit can be used to protect the DDTC114TE-7-F from excessive heat buildup. In addition, the device is designed to operate in any polarization direction, allowing it to be used for either single-ended or push-pull applications.

The DDTC114TE-7-F is well-suited for use in a variety of applications. It is commonly used as a single transistor amplifier, as its low input capacitance allows it to accurately amplify signals without adding any unwanted distortion. Additionally, the DDTC114TE-7-F can be used as a switching device in low-voltage and high-voltage applications. It is also highly reliable and can be used in a harsh environment.

The DDTC114TE-7-F is a versatile pre-biased transistor that offers a wide range of features and applications. It is designed for low-current and high-current applications, and has a low quiescent current for low-power applications. It also comes with a built-in thermal shutdown circuit and can be used in any polarization direction. As a result, it is highly suitable for use in a variety of signal processing and telecommunications applications.

The specific data is subject to PDF, and the above content is for reference

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