![DDTC114TE-7-F Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | DDTC114TE-FDITR-ND |
Manufacturer Part#: |
DDTC114TE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Base Part Number: | DDTC114 |
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The DDTC114TE-7-F is a integrated circuit bipolar transistor that uses a variety of technologies in order to reduce its power consumption and increase its reliability. This makes it highly versatile and applicable in a variety of applications, ranging from amplification and switching to signal processing and telecommunications. As a pre-biased transistor, the DDTC114TE-7-F can serve as either a high-current or low-current device depending on the application. In addition, the DDTC114TE-7-F has a wide voltage range, making it suitable for use in low-voltage and high-voltage applications.
The DDTC114TE-7-F is an NPN-type transistor that offers both a high-side and low-side configuration. For the low-side configuration, the transistor will typically operate as a voltage-fed device. This means that the DDTC114TE-7-F can be used as a switch to control current on the low-side of the voltage input. The NPN-type configuration also allows for the DDTC114TE-7-F to have a low input capacitance, which is ideal for use in signal-processing applications.
The DDTC114TE-7-F exhibits a very low quiescent current, which makes it well-suited for use in low-power applications. The low quiescent current also ensures that the transistor operates at a stable voltage across the entire operating temperature range. The DDTC114TE-7-F also comes with a built-in Beta (current gain) of 130, meaning that it can achieve a large signal boost with minimal current consumption.
The DDTC114TE-7-F is a fully-isolated, self-biased device which comes with a highly efficient thermal shutdown circuit. This thermal shutdown circuit can be used to protect the DDTC114TE-7-F from excessive heat buildup. In addition, the device is designed to operate in any polarization direction, allowing it to be used for either single-ended or push-pull applications.
The DDTC114TE-7-F is well-suited for use in a variety of applications. It is commonly used as a single transistor amplifier, as its low input capacitance allows it to accurately amplify signals without adding any unwanted distortion. Additionally, the DDTC114TE-7-F can be used as a switching device in low-voltage and high-voltage applications. It is also highly reliable and can be used in a harsh environment.
The DDTC114TE-7-F is a versatile pre-biased transistor that offers a wide range of features and applications. It is designed for low-current and high-current applications, and has a low quiescent current for low-power applications. It also comes with a built-in thermal shutdown circuit and can be used in any polarization direction. As a result, it is highly suitable for use in a variety of signal processing and telecommunications applications.
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DDTC114EUA-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC113ZCA-7-F | Diodes Incor... | -- | 15000 | TRANS PREBIAS NPN 200MW S... |
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DDTC114YUA-7-F | Diodes Incor... | -- | 3000 | TRANS PREBIAS NPN 200MW S... |
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