Allicdata Part #: | DDTC115EEDITR-ND |
Manufacturer Part#: |
DDTC115EE-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC115EE-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Resistor - Emitter Base (R2): | 100 kOhms |
Base Part Number: | DDTC115 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC115EE-7 is a type single pre-biased transistor, which is used in a variety of applications. It is primarily used in the power management area, in particular, in power supply regulation. It is also used in many other applications where fast switching and high current control is required.
A transistor is a three-terminal device that acts as a switch or amplifier. This transistor has an emitter, a base and a collector. The DDTC115EE-7 transistor has a base voltage of 7V and is available in a variety of package sizes, including SOT-223, DPAK and TO-220. Depending on the application, it can either be used as an NPN or a PNP transistor.
The NPN (negative-positive-negative) type is commonly used for switching applications. The DDTC115EE-7 is a pre-biased type, meaning that the transistor is already biased with a reverse voltage that is applied to its base-emitter junction. This reverse voltage helps to reduce the impact of any external noise or signals on the transistor’s operation.
When used as an NPN transistor, the transistor is activated by applying a positive voltage to its base terminal. This causes a current to flow between the emitter and collector of the transistor, allowing current to pass through the transistor. When the voltage is removed, the transistor is turned off.
The PNP type is used for amplification and signal processing applications. In this configuration, the base voltage is reversed and a negative voltage applied to the transistor’s base-emitter junction. The reverse voltage helps to increase the gain of the transistor, allowing it to amplify signals or currents that are passed through it. The reverse voltage also helps to reduce noise by inhibiting the flow of extraneous signals.
The DDTC115EE-7 has a typical collector-emitter saturation voltage of 1.4V and a typical switching time of 17ns, making it ideal for high-speed switching applications. The transistor can also handle up to 1.2A of collector current, making it suitable for use in high-current applications.
The DDTC115EE-7 is an excellent choice for a variety of applications, including power supply regulation, high-speed switching, signal processing and amplification. Its pre-biased configuration helps to reduce the impact of noise and extraneous signals, making it the perfect choice for demanding applications.
The specific data is subject to PDF, and the above content is for reference
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