Allicdata Part #: | DDTC115EKA-7-F-ND |
Manufacturer Part#: |
DDTC115EKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC115EKA-7-F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Base Part Number: | DDTC115 |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 100 kOhms |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A DDTC115EKA-7-F is a single, pre-biased bipolar junction transistor (BJT). It is commonly used in electronic circuits that require a transistor that can produce a large signal current while operating with minimal power consumption. This type of transistor also has a very low amount of distortion when operating in its linear region. It is often used in applications that require amplification, switching, or signal conditioning to create a desired signal or to control the power of a device.
The DDTC115EKA-7-F is a NPN transistor, meaning that it consists of a base, emitter, and collector. It is a pre-biased transistor which means that the base-emitter junction has a reverse bias voltage applied to it. This reverse bias voltage can help to reduce the amount of noise and distortion present when used in an application. The DDTC115EKA-7-F has a maximum power rating of 300 mW and is able to operate at a maximum frequency of 5 MHz. It is also able to operate at a minimum voltage range of 15 V and has a maximum voltage range of 120 V.
The working principle of the DDTC115EKA-7-F is based on a common-emitter configuration. When a voltage is applied to the base terminal, the base collector junction becomes forward-biased and current starts to flow from the base to the collector. This will cause the current in the collector to increase, the voltage across the collector load to decrease, and the voltage at the emitter terminal to drop. This allows current to flow from the emitter to the collector, creating an amplified signal.
The DDTC115EKA-7-F is a versatile transistor that can be used for a wide range of applications. It is most commonly used for amplifying, switching, and signal conditioning circuits, but can also be used to control the power of various devices. It is widely used in motor control, remote-controlled devices, automotive electronics, audio amplifiers, and industrial controls. Its low power consumption and high signal current make it one of the most popular transistors available on the market today.
In conclusion, the DDTC115EKA-7-F is a single, pre-biased bipolar junction transistor that is commonly used in a wide range of electronic circuits. It offers low power consumption and high signal current, making it an ideal choice for amplifying, switching, and signal conditioning. Its versatility and durability make it the perfect choice for a variety of applications and circuits.
The specific data is subject to PDF, and the above content is for reference
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