Allicdata Part #: | DDTC123TEDITR-ND |
Manufacturer Part#: |
DDTC123TE-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC123TE-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.05530 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTC123 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC123TE-7 is a single, pre-biased bipolar junction transistor (BJT) that is used as an interface for a wide range of applications. This particular model is specifically designed for low-power applications that require a high speed drive capability and a wide dynamic range. The DDTC123TE-7 is specifically suited for audio, video and telecom applications.
A bipolar junction transistor (BJT) is a type of transistor that is made up of two different types of semiconductor materials, an N-type and a P-type. It works by using the movement of electrons from the N-type material to the P-type material and then back again. This creates a current flow in the transistor and this is what makes it work.
The DDTC123TE-7 is a small, pre-biased BJT that features a high speed drive capability and low power dissipation. This makes it well suited for applications such as audio, video, telecommunications and more. The transistor also features a wide dynamic range, which allows it to handle a wide range of tasks, from audio to high speed data transmission. The pre-biasing of the transistor also makes it easier to configure the transistor to work in a wide range of applications.
The DDTC123TE-7 is built on a submicron process, which gives it superior switching performance compared to other bipolar junction transistors. The transistor also features a low output capacitance, which helps to reduce its power dissipation. The transistor is often used as an amplifier, due to its high speed drive capability and wide dynamic range.
In terms of working principles, the DDTC123TE-7 works by allowing current to flow through the base of the transistor. When a suitable voltage is applied to the Base, the transistor will allow a current to flow from its collector to its emitter. The current will then be amplified by the transistor, depending on the amount of current applied to the base. This is how an amplifier works – current is sent out at a low level, and then created at a higher level.
The DDTC123TE-7 is a single-prebiased bipolar junction transistor (BJT) optimized for low-power applications. Its high speed drive capability and wide dynamic range make it well suited for audio, video and telecom applications. Its small size, low output capacitance and low power dissipation make it an ideal choice for applications such as audio, video and telecom.
The specific data is subject to PDF, and the above content is for reference
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