Allicdata Part #: | DDTC124GEDITR-ND |
Manufacturer Part#: |
DDTC124GE-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC124GE-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.05530 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | DDTC124 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC124GE-7 is a single pre-biased bipolar transistor, categorized as transistors - Bipolar (BJT) - Single, Pre-Biased. The device is designed to enable excellent linearity, high transconductance value, and low power consumption in a variety of transistor applications. It is commonly used in high-frequency switching and amplification circuits, as well as in voltage regulator circuits.
The DDTC124GE-7 transistor consists of three terminals: a base, a collector and an emitter. Its most important characteristics are its collector-emitter voltage, base-emitter voltage, and collector currents. The device is especially suited for use in linear integrated amplifier applications due to its low power consumption and high transconductance value. This unit is also capable of handling very high frequencies, making it suitable for a variety of high-frequency switching applications.
The DDTC124GE-7 transistor is a pre-biased bipolar device. This means that the collector and emitter already have a bias voltage prior to being subjected to the gate voltage. This helps to reduce the gate voltage needed to turn on the transistor, simply by connecting the base of the transistor to ground. This also helps to reduce the size of the gate voltage needed to turn off the transistor when the circuit needs to be disabled. The pre-biased configuration also provides improved temperature stability and improved linearity.
The DDTC124GE-7 transistor works by controlling the conductive state of the device based on the current flow to the base terminal. The base current current changes the resistance of the base-emitter junction. When the base current is low, the resistance of the junction is higher, and this prevents current from flowing from the collector to the emitter, effectively preventing current from flowing into the output. When the base current increases, the resistance of the junction decreases, thus allowing current to flow from the collector to the emitter, and into the output. This is known as the \'collector current\' and is controlled by the amount of current flowing to the base terminal.
The DDTC124GE-7 transistor is an excellent choice for many circuit applications due to its high frequency response, low power consumption, and pre-biased characteristics. The device is especially well-suited for high frequency switching and amplification circuits, as well as voltage regulator circuits. The DDTC124GE-7 is a versatile device and can be used in a variety of different circuit applications.
The specific data is subject to PDF, and the above content is for reference
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