DDTC124XCA-7 Allicdata Electronics
Allicdata Part #:

DDTC124XCADITR-ND

Manufacturer Part#:

DDTC124XCA-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC124XCA-7 datasheetDDTC124XCA-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: DDTC124
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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A DDTC124XCA-7 is a single, pre-biased bipolar junction transistor (BJT). It is commonly used in applications where speed and power are essential and small size and low power are required. The DDTC124XCA-7 is designed to be used in a variety of applications, including amplifier stages, emitter-coupled logic (ECL) circuits, and active loads. It is also capable of handling high-peak output levels, which makes it an ideal choice for applications such as audio amplifiers.

A BJT is a three-terminal semiconductor device that is used to control current between two of its terminals. It is made up of two PN junctions, which are composed of two regions that are either doped with different elements or oppositely charged. When a voltage is applied to the base terminal of the BJT, current flows between the emitter and collector terminals. This current flow can be altered by adjusting either the voltage on the base terminal or the amount of current flowing through the collector-emitter region. The ratio of the current flowing from the collector to the emitter is known as the gain.

The DDTC124XCA-7 has a collector-emitter breakdown voltage of 3.2V, which is the maximum collector-emitter voltage required for the BJT to conduct current. The device also has an extremely low collector-emitter saturation voltage of 0.2V, which means the BJT can handle high-peak output levels without any distortion. The device also has a high collector-base voltage of 6V, which allows it to be used as an active load in applications with high voltage and/or current. Additionally, the device has a low collector-base capacitance of 0.2pF, which allows it to quickly switch between high and low levels of output, making it ideal for ECL circuits.

In addition to its high-performance specifications, the DDTC124XCA-7 is also known for its small size. The device measures only 4.0mm x 1.9mm, making it an ideal choice for space-constrained applications. Additionally, it has a low power consumption of only 6mA and a maximum power dissipation rating of 100mW. This makes it ideal for applications that require low power, such as battery-operated applications.

In conclusion, the DDTC124XCA-7 is suitable for a variety of applications that require speed, power, and small size. It features a collector-emitter breakdown voltage of 3.2V and a low collector-emitter saturation voltage of 0.2V, which makes it ideal for applications such as audio amplifiers. Additionally, the device has a high collector-base voltage of 6V and a low collector-base capacitance of 0.2pF, making it ideal for ECL circuits. The device also has a small size of only 4.0mm x 1.9mm and a low power consumption of 6mA, making it ideal for battery-operated applications.

The specific data is subject to PDF, and the above content is for reference

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