DDTC143FE-7 Allicdata Electronics
Allicdata Part #:

DDTC143FEDITR-ND

Manufacturer Part#:

DDTC143FE-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC143FE-7 datasheetDDTC143FE-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05530
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Base Part Number: DTC143
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC143FE-7 is a Pre-Biased, Single Bipolar Junction Transistor (BJT) designed for power applications.

The DDTC143FE-7 has four essential electrical terminals: the Base, the Collector, the Emitter and the Gate. It can perform either switching or amplifying operations depending on the load.

The Base is the controlling terminal of the DDTC143FE-7. A current flowing through the Base allows a larger current to flow-through the Collector/Emitter path. This current flow depends on the current gain of the transistor. The collector of the DDTC143FE-7 is connected to the source of supply and the emitter is connected to ground.

A typical application of the DDTC143FE-7 is to switch an electrical load on and off. It can be used as a control element when connected to a series of resistors or inductors. It is best suited for applications requiring high current gain, high switching and high power dissipation.

The working of the DDTC143FE-7 is based on the basic principle of operation of a BJT. This refers to a combination of a forward-biased junction between the Base/Emitter (BE) and a reverse-biased Junction between the Collector/Base (CB). An electric current injected from the Base will manifest itself in a amplified current from the collector to the emitter. The current gain of the transistor is determined by the ratio of the collector current to the base current (IC/IB).

The DDTC143FE-7 is best suited for applications where low-level signals need to be amplified, or where high power switching is required. They are used in a variety of power applications such as switch-mode power supplies, motor controllers, lithium-ion battery packs and power factor correction circuits. They provide excellent power efficiency and can be used as an efficient and cost-effective alternative to vacuum tubes.

In conclusion, the DDTC143FE-7 is a Pre-Biased, Single Bipolar Junction Transistor designed for power applications. Its four electrical terminals, Base, Collector, Emitter, and Gate allow it to perform either amplifying or switching operations. The working of the DDTC143FE-7 is based on the basic principle of BJT operation. It is mainly used in power applications such as switch-mode supplies, motor controllers and power factor correction circuits.

The specific data is subject to PDF, and the above content is for reference

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