Allicdata Part #: | DDTC143FEDITR-ND |
Manufacturer Part#: |
DDTC143FE-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC143FE-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.05530 |
Resistor - Emitter Base (R2): | 22 kOhms |
Base Part Number: | DTC143 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC143FE-7 is a Pre-Biased, Single Bipolar Junction Transistor (BJT) designed for power applications.
The DDTC143FE-7 has four essential electrical terminals: the Base, the Collector, the Emitter and the Gate. It can perform either switching or amplifying operations depending on the load.
The Base is the controlling terminal of the DDTC143FE-7. A current flowing through the Base allows a larger current to flow-through the Collector/Emitter path. This current flow depends on the current gain of the transistor. The collector of the DDTC143FE-7 is connected to the source of supply and the emitter is connected to ground.
A typical application of the DDTC143FE-7 is to switch an electrical load on and off. It can be used as a control element when connected to a series of resistors or inductors. It is best suited for applications requiring high current gain, high switching and high power dissipation.
The working of the DDTC143FE-7 is based on the basic principle of operation of a BJT. This refers to a combination of a forward-biased junction between the Base/Emitter (BE) and a reverse-biased Junction between the Collector/Base (CB). An electric current injected from the Base will manifest itself in a amplified current from the collector to the emitter. The current gain of the transistor is determined by the ratio of the collector current to the base current (IC/IB).
The DDTC143FE-7 is best suited for applications where low-level signals need to be amplified, or where high power switching is required. They are used in a variety of power applications such as switch-mode power supplies, motor controllers, lithium-ion battery packs and power factor correction circuits. They provide excellent power efficiency and can be used as an efficient and cost-effective alternative to vacuum tubes.
In conclusion, the DDTC143FE-7 is a Pre-Biased, Single Bipolar Junction Transistor designed for power applications. Its four electrical terminals, Base, Collector, Emitter, and Gate allow it to perform either amplifying or switching operations. The working of the DDTC143FE-7 is based on the basic principle of BJT operation. It is mainly used in power applications such as switch-mode supplies, motor controllers and power factor correction circuits.
The specific data is subject to PDF, and the above content is for reference
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