DDTC143ZE-7 Allicdata Electronics
Allicdata Part #:

DDTC143ZEDITR-ND

Manufacturer Part#:

DDTC143ZE-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC143ZE-7 datasheetDDTC143ZE-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: DTC143
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The DDTC143ZE-7 is a single, pre-biased Bipolar Junction Transistor (BJT). The device is designed to provide a reliable, low-cost solution for applications requiring a stable, pre-biased BJT for controlling high current flow. The simple pre-biasing technique used to achieve the desired current flow makes the DDTC143ZE-7 an ideal choice for use in system designs where frequent switching, rapid switch-on times, or extended operating life are desired.

The DDTC143ZE-7 consists of an NPN device with an integrated base resistor that connects the collector and the base of the device. This configured allows for the device to be pre-biased into the correct operating point, thus eliminating the need to simulate the process of biasing the device prior to application. The base resistor limits the peak current flow and stabilizes the device performance while also providing a high input impedance. This allows the device to isolate the collector voltage from the base voltage, thus eliminating the need to adjust the bias voltage when the load current is changed.

A further benefit of the integrated base resistor is that it makes the process of biasing the DDTC143ZE-7 much easier than with traditional BJT devices. The device can be provided with power at the correct voltage and then left uncoupled, allowing it to attain the correct operating point with minimal effort. This ease of application makes it particularly useful in systems where quick setup times are necessary.

The DDTC143ZE-7 is particularly well suited for applications requiring a low-cost, reliable, and efficient device operating at high currents. The natural trade-off of working at high currents is that the DDTC143ZE-7 has a lower voltage threshold than similar transistors at lower currents. However, the device is still capable of providing good performance, as its integrated base resistor is configured to provide more than adequate current blocking, while still allowing for efficient operation. The device is also capable of operating at high temperatures and is designed for robust operation in harsh environments.

The DDTC143ZE-7 is an excellent choice for controlling large current applications due to its inherent simplicity. Its pre-biased design eliminates the need for complex biasing requirements and its integrated base resistor isolates the device’s collector voltage from the base voltage, allowing for steady and correct operation. Its small size, high current capacity, and strong performance make it suitable for a variety of applications from DC power distribution to industrial control systems.

The specific data is subject to PDF, and the above content is for reference

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