DDTC144GKA-7-F Allicdata Electronics
Allicdata Part #:

DDTC144GKA-7-F-ND

Manufacturer Part#:

DDTC144GKA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SC59-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC144GKA-7-F datasheetDDTC144GKA-7-F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3
Base Part Number: DDTC144
Description

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DDTC144GKA-7-F transistors are an example of single, pre-biased bipolar junction transistors (BJT). The device is used to control current in electronic equipment. It is a versatile component that can be used in a variety of applications ranging from controlling current in logic circuits to applications requiring higher power, such as amplifier stages. The DDTC144GKA-7-F achieves its pre-biasing by internal circuitry, resulting in faster response times and higher current gain, thus providing high performance.

A BJT is basically two diodes connected back to back, with an additional control element between them. The two diodes create a layer, known as the base-emitter junction, where electrons and holes can flow when a voltage is applied across them. This voltage is known as the base-emitter voltage. The control element is called the base, and when a current flows through it, the flow of electrons and holes across the base-emitter junction is amplified. This current flow is called the collector current.

The DDTC144GKA-7-F transistor is a pre-biased device, which means that it has been designed so that when a voltage is applied across its base, its collector current will be larger than it would be without pre-biasing. This is accomplished internally through a circuit that adds an additional voltage to the base-emitter junction, resulting in an increased collector current as compared to an un-biased device. This additional voltage is known as the pre-bias voltage and is usually adjustable.

The DDTC144GKA-7-F has many features that make it an ideal device for many applications. It has a high current gain, meaning that it can amplify a small current to a large one. It also has a low input capacitance, which means it responds quickly to input variations and can switch quickly between ON and OFF states. Finally, it has a long-term stability, meaning that its performance is not affected by temperature drift or other environmental conditions.

The DDTC144GKA-7-F transistor is commonly used in applications such as power amplifiers, logic circuits, and diode array circuits. In power amplifier applications, it is used to amplify small signals to high levels, providing improved stability and higher performance. In logic circuits, it is used to switch transistors on and off in response to specific input signals. And in diode array circuits, it is used to control the current flow to each diode in the array.

The DDTC144GKA-7-F transistor is a versatile component that can be used in a variety of applications. Its pre-biasing and high current gain features allow it to provide fast response times and improved performance. Additionally, its long-term stability makes it a reliable device for many applications. As such, it is an ideal choice for use in a wide range of applications where current control and amplification are required.

The specific data is subject to PDF, and the above content is for reference

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