Allicdata Part #: | DDTC144WE-FDITR-ND |
Manufacturer Part#: |
DDTC144WE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC144WE-7-F Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 22 kOhms |
Base Part Number: | DDTC144 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC144WE-7-F is a pre-biased single bipolar junction transistor (BJT), which is primarily employed for its versatility in the application of amplifying and switching applications due to its ability to control the current flow between two terminals with a small input signal. The device is one of the most commonly used types of transistors and is a two-terminal switching device consisting of four layers of semiconductor material. In a pre-biased transistor, the current gain achieved is fairly constant over a broad range of collector-emitter voltage and is generally lower than what is available in an un-biased transistor.
The circuit design of the DDTC144WE-7-F pre-biased single BJT involves a biasing resistor and a base resistor. The biasing resistor is used to adjust the current flow in the collector-base junction of the device. This biasing resistor is set to a pre-defined value to determine the amount of current flowing through the device when the base-emitter junction is activated, balanced against the voltage supplied by the base resistor. The base resistor is designed to ensure that the correct base current is supplied to the device. The biasing resistor helps adjust the gain of the device, and the base resistor is designed to enable the device to operate over a wide range of voltages and currents without sacrificing the quality of its performance.
The working principle of the DDTC144WE-7-F pre-biased single BJT is based on the application of a small current through the base of the transistor. This current is generated by the voltage source applied to the base resistor, and the current generated is then controlled by the biasing resistor. When the base-emitter junction of the transistor is activated, it switches on the current flow between the collector and the emitter. The current flowing through the device is regulated by the biasing resistor. When the biasing resistor is set to a high value, it results in a larger current via the collector-base junction, leading to a higher gain. On the other hand, when the biasing resistor is set to a low value, it results in a lower current via the collector-base junction and a lower gain.
The DDTC144WE-7-F pre-biased single BJT can be used in a variety of applications, such as amplifying and switching. The device is also capable of operating at a wide range of voltages and currents without sacrificing performance, due to its biasing and base resistors. As a result, it is an ideal choice for electronics engineers who are looking for a versatile device to use in their projects.
The specific data is subject to PDF, and the above content is for reference
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