DDTD113ZU-7-F Allicdata Electronics
Allicdata Part #:

DDTD113ZU-7-F-ND

Manufacturer Part#:

DDTD113ZU-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD113ZU-7-F datasheetDDTD113ZU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04208
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Base Part Number: DTD113
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DDTD113ZU-7-F is an NPN pre-biased single transistor. This type of transistor is widely used in electronics, gaining popularity in industrial and consumer products. The transistor provides an energy efficient solution to various applications and projects, making it a strong option for many design needs.

The DDTD113ZU-7-F is ideal for power switching and logic applications, due to its high current capabilities and low on-resistance. It provides a very low levels of turn-on/off switching times and capacitive spikes, as well as excellent noise immunity. This makes it ideal for high-speed switching operations.

This transistor also works well with a wide range of signal frequencies, which is helpful when used in signal processing and signal control applications. The transistor’s high-speed response and low noise makes it a strong choice for analog processing. It is also used in motor control and basic logic applications.

The working principle of the DDTD113ZU-7-F transistor is simple yet effective. This type of transistor works on a bipolar junction principle, meaning that it has five p-type and n-type terminals: the base, the collector, the emitter, the left side of the circuit, and the right side of the circuit. The base is the voltage-control terminal, and the collector and emitter terminals work together to control the current flow through them. When the base voltage is applied, the base and collector terminals become reverse-biased and the current between them increases. This creates an inversion layer in the transistor, allowing a current flow to take place.

The amount of current that passes through the transistor is determined by the amount of base current. This current is determined by the voltage applied to the base; the higher the voltage, the more current that is passed through the transistor. As the base voltage decreases, the current through the transistor decreases. This type of transistor can handle a required current of up to 10A, making it ideal for power switching applications.

The DDTD113ZU-7-F pre-biased single transistor is a great option for many types of applications due to its versatile design and low on-resistance. Its bipolar junction principle makes it an ideal choice for power switching applications and signal processing, with its high current capabilities, fast switching, and noise immunity. This is an ideal device for a wide range of projects and designs.

The specific data is subject to PDF, and the above content is for reference

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