DDTD114GU-7-F Allicdata Electronics
Allicdata Part #:

DDTD114GU-7-F-ND

Manufacturer Part#:

DDTD114GU-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD114GU-7-F datasheetDDTD114GU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04208
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: DTD114
Description

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The DDTD114GU-7-F is a pre-biased NPN single transistor device with an integrated resistor network. It is a general-purpose transistor for applications requiring signals up to 40 V, 5 A and 40 MHz of frequency. The transistor has a maximum collector-emitter voltage of 40 V, a maximum collector current of 5 A, a h0FE of 35 mV, an operating temperature range of -55 C to 150 C, and an operating frequency range of 40 MHz. It is available in a surface-mount DPAK package.

Design Considerations for DDTD114GU-7-F

The design of the DDTD114GU-7-F takes into account power, performance, and cost considerations that are particularly important in the design of integrated circuits. It is a low-cost device, but it has a wide power range, a low on-resistance, good speed, thermal resistance, and a low-noise level (min/max).

Applications of DDTD114GU-7-F

The DDTD114GU-7-F is suitable for a variety of applications, including high-speed data acquisition, speed control, and power control. Its pre-biased design makes it well-suited for high-frequency switching and amplifier applications. It can be used to control the output of high-voltage and high-current power supplies. It can also be used for audio and video signal-processing applications.

Working Principle of DDTD114GU-7-F

The DDTD114GU-7-F is a pre-biased NPN single transistor with an integrated resistor network. It works by controlling the base-emitter voltage of the NPN transistor using the integrated resistor network. The resistor network controls the current flow through the transistor, which in turn controls the voltage applied to the collector. When the correct base-emitter voltage is applied, it will cause the electrons to move from the emitter to the base, allowing the current to flow from the collector to the emitter. The voltage applied to the collector will then control the amount of current flowing through the transistor, allowing the switching of high-powered electrical circuits.

Conclusion

The DDTD114GU-7-F is a pre-biased single transistor device with an integrated resistor network. It is a general-purpose transistor that can be used for high-speed data acquisition, speed control, power control, and audio and video signal-processing applications. Its pre-biased design enables it to switch and amplify high-voltage and high-current power supplies. It works by controlling the base-emitter voltage of the NPN transistor using the integrated resistor network to control the current flow through the transistor, thereby controlling the voltage applied to the collector.

The specific data is subject to PDF, and the above content is for reference

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