DDTD123EU-7-F Allicdata Electronics
Allicdata Part #:

DDTD123EU-7-F-ND

Manufacturer Part#:

DDTD123EU-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD123EU-7-F datasheetDDTD123EU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04208
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Base Part Number: DTD123
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DDTD123EU-7-F is a single, pre-biased bipolar junction transistor (BJT). The device is mainly used for applications that require a high-filter bandwidth that can also handle low-frequency signals. The device has a wide range of operating voltage and can be used for audio and video applications.

A bipolar junction transistor (BJT) is a three-terminal semiconductor device constructed from two p-n junctions. The device is mainly used for signal amplification and switching applications. BJTs are also considered versatile devices because they can be operated either as an amplifying device or a switching device. The DDTD123EU-7-F is a single, pre-biased BJT, which means that the junction between the emitter and the base has been pre-biased with a current. This type of BJT is used to reduce the amount of bias current required to operate the device.

The DDTD123EU-7-F is mainly used in applications where a large bandwidth is required, such as audio and video applications. The device can handle both low- and high-frequency signals, which makes it suitable for use in these applications. The device can handle an output power of up to 8 watts and can operate over a wide range of temperatures.

The DDTD123EU-7-F has a wide range of operating voltages. The device can operate from a minimum of 2.4 volts up to a maximum of 30 volts. The device is also capable of handling large current pulses with very low signal distortion, making it ideal for low-noise audio amplifier design. The device also features an internal reverse bias diode, which is used to protect the device from reverse voltage. Additionally, the device is capable of withstanding a large range of operating temperatures.

The DDTD123EU-7-F is a high-performance, pre-biased BJT that can be used in both digital and analog applications. The device is mainly used for signal amplification as well as switching applications. The device is capable of handling low- and high-frequency signals and can be used in audio and video applications. Additionally, the device has a wide range of operating voltages and can handle large current pulses with low signal distortion. The device also has an internal reverse-bias diode and can withstand operating temperatures of up to 150°C. This makes the DDTD123EU-7-F an ideal choice for applications that require a high-filter bandwidth and low-noise performance.

The specific data is subject to PDF, and the above content is for reference

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