DDTD142TC-7 Allicdata Electronics

DDTD142TC-7 Discrete Semiconductor Products

Allicdata Part #:

DDTD142TCDITR-ND

Manufacturer Part#:

DDTD142TC-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD142TC-7 datasheetDDTD142TC-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Base Part Number: DTD142
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Base (R1): 470 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTD142TC-7 is a single, pre-biased, bipolar junction transistor (BJT) used in a number of applications. It is a point-contact BJT, with a significantly higher voltage gain than most other transistors of the same type. This transistor is designed for high-frequency applications, and has a very fast switching speed.

A point-contact BJT consists of two p-type and n-type regions separated by a thin barrier layer, known as the base. The base has a very thin p-n junction that allows electrons to flow from one side to the other. Electrons from the emitter region travel through the base and combine with positive charge carriers from the collector region, resulting in current flow between the two regions.

The DDTD142TC-7 is special because it has a pre-biased circuit which helps reduce the turn-on time of the transistor by allowing the base voltage to override the emitter voltage. This is done by adding an external capacitor and a resistor to the base of the transistor. The capacitor acts as a voltage divider, while the resistor controls the current. The combination of the two components helps to reduce the turn-on time and provide a better performance.

The DDTD142TC-7 can be used in a number of applications, including high-frequency amplification, switching and power conversion. Its fast switching speed makes it ideal for high-frequency operations, such as pulse modulation and signal transmission. It is also used in power conversion applications, such as solar cell input circuitry and DC-DC converters. In addition, this transistor can be used in various analog circuits, such as variable amplifiers and oscillators.

The DDTD142TC-7 is a popular choice for high-frequency applications, due to its fast switching speed and high voltage gain. In addition, its pre-biased circuit helps reduce the turn-on time, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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