DDTD123YC-7-F Allicdata Electronics
Allicdata Part #:

DDTD123YC-7-FDITR-ND

Manufacturer Part#:

DDTD123YC-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD123YC-7-F datasheetDDTD123YC-7-F Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DTD123
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction

The DDTD123YC-7-F is a pre-biased single bipolar junction transistor (BJT). It is a 3-pin transistor with an metal surface-mount package. With its superior performance and durability, the DDTD123YC-7-F is an excellent choice for a wide range of applications.

This article will discuss the application field and working principle of the DDTD123YC-7-F.

Application Field

The DDTD123YC-7-F can be used in a variety of applications, including:

  • Low-power applications such as Bluetooth, Zigbee, and WiFi
  • High-power amplifier and switching applications
  • Power management for computers, tablets, and phones
  • Voice switching for land-line and cellular communication
  • Power line communication and lighting systems
  • Bidirectional metering, tracking, and analyzing systems
  • Control systems for medicine, heating, and cooling

Due to its superior performance and durability, the DDTD123YC-7-F is well-suited for a broad range of applications and has become a popular choice for designers.

Working Principle

The DDTD123YC-7-F is a bipolar junction transistor (BJT). It has two main components, the emitter and the collector. The emitter is a negatively charged electrode which emits electrons. The collector is a positively charged electrode which collects electrons. The base is a third electrode that controls the current flow between the emitter and the collector.

The current flow is determined by the difference in voltage between the emitter and the collector. When the voltage difference is positive (the emitter voltage is higher than collector voltage), this is called "forward bias". In this state, electrons are emitted from the emitter and collected at the collector. Thus, current flows from the emitter to the collector. On the other hand, when the voltage difference is negative (the collector voltage is higher than emitter voltage), this is called "reverse bias". In this state, electrons are attracted from the collector to the emitter, resulting in current flowing from the collector to the emitter.

The DDTD123YC-7-F is a pre-biased transistor, meaning that it is already configured in either a forward bias or reverse bias, depending on the particular application. This allows for a quick and easy connection to external components, resulting in an efficient system.

Conclusion

In summary, the DDTD123YC-7-F is a pre-biased single bipolar junction transistor which is a popular choice for a variety of applications. The base electrode controls the current flow between the emitter and the collector by controlling the voltage difference between them. It is a pre-biased transistor, so it is already configured in either a forward bias or reverse bias, depending on the particular application.

The specific data is subject to PDF, and the above content is for reference

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