DDTD143TU-7-F Allicdata Electronics

DDTD143TU-7-F Discrete Semiconductor Products

Allicdata Part #:

DDTD143TU-7-FDITR-ND

Manufacturer Part#:

DDTD143TU-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD143TU-7-F datasheetDDTD143TU-7-F Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 3000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Base Part Number: DTD143
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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DDTD143TU-7-F is a pre-biased single bipolar junction transistor (BJT). Such transistors can be used as an amplifier or a switch by controlling the applied current.

These transistors are available in a surface-mount package and are used in many applications such as audio amplifiers, motor controls, RF amplifiers, switch control, and logic gate control. They are also used in test and measurement equipment, medical equipment, switching power supplies, variable-frequency drives, and portable communication devices.

This transistor has three terminals: the collector, base, and emitter. The collector and emitter are used as the input and output terminals, respectively. The base is used to control the current flow between the collector and emitter. When a voltage is applied to the base, it creates a current through the transistor. This current varies with the applied voltage and is used to control the output voltage of the transistor.

The DDTD143TU-7-F can be used in either the “common emitter” or “common base” configuration. The base-emitter voltage is pre-biased to a low, turn-on voltage, which allows the transistor to operate at a higher frequency than non-biased transistors. This feature allows the DDTD143TU-7-F to be used in high-frequency amplifier applications.

The DDTD143TU-7-F has a high current gain and low voltage drop, which makes it suitable for many high-power applications. It also has a high breakdown voltage, which allows it to handle high voltage, high voltage transients, and large surge currents. Additionally, it has a wide temperature range from -55°C to +175°C.

In summary, the DDTD143TU-7-F is a pre-biased single bipolar junction transistor (BJT) used in many applications for audio and RF amplification and switch control. It is available in a surface-mount package and has a wide temperature range. It has high current gain and low voltage drop, as well as a high breakdown voltage, making it ideal for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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