DDTD123TU-7-F Allicdata Electronics
Allicdata Part #:

DDTD123TU-7-FDITR-ND

Manufacturer Part#:

DDTD123TU-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD123TU-7-F datasheetDDTD123TU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04208
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: DTD123
Description

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The DDTD123TU-7 F transistor is a single pre-biased bipolar junction transistor (BJT) that is specifically designed for amplifying or switching applications. It has a variety of features that make it well-suited to many different applications. This article will discuss the application field and working principle of the DDTD123TU-7 F transistor.

Overview

The DDTD123TU-7 F transistor is a NPN double diffused NPN single pre-biased BJT. It consists of two layers of doped silicon and a single PN junction between them. This type of transistor is designed for use in a wide range of applications, including switching, amplification, and signal processing. It is available in a variety of packages, including SOIC, SOT-223, and SO-8, and is capable of operating at operating temperatures of up to 175°C.

Applications

The DDTD123TU-7 F transistor is primarily used for amplification and signal processing applications. It can be used in audio amplifiers, motor control, and signal conditioning applications. It is also suitable for use in analog, digital, and low-frequency switching applications. The pre-biased nature of the DDTD123TU-7 F transistor makes it an excellent choice for applications that require minimal power dissipation. It is also useful for applications that require high-current gain and low-noise operation. In addition, the DDTD123TU-7 F transistor is well-suited for applications that require the use of multiple transistors in parallel.

Working Principle

The DDTD123TU-7 F transistor operates on the principle of bipolar junction transistors, or BJTs. This type of transistor consists of three layers, or junctions, between two layers of doped silicon. When a current passes through one of these junctions, it causes the voltage at the other two junctions to increase or decrease, depending on the flow of current. This, in turn, controls the flow of current between the two layers. The pre-biased nature of the DDTD123TU-7 F transistor allows it to operate at higher current levels and gain with lower noise, as compared to traditional BJTs.

Conclusion

The DDTD123TU-7 F transistor is a single pre-biased bipolar junction transistor (BJT) that is specifically designed for amplifying or switching applications. It has a variety of features that make it well-suited to many different applications, including audio amplifiers, motor control, signal processing, and digital and low-frequency switching applications. The pre-biased nature of the DDTD123TU-7 F transistor allows it to operate at higher current levels and gain with lower noise, as compared to traditional BJTs.

The specific data is subject to PDF, and the above content is for reference

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