DDTD142JC-7-F Allicdata Electronics

DDTD142JC-7-F Discrete Semiconductor Products

Allicdata Part #:

DDTD142JC-FDITR-ND

Manufacturer Part#:

DDTD142JC-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD142JC-7-F datasheetDDTD142JC-7-F Datasheet/PDF
Quantity: 57000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 57000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: DTD142
Description

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The DDTD142JC-7-F transistor is a single, pre-biased BJT transistor that is ideal for applications with low voltage and moderate current. It offers high performance and features outstanding gain linearity over a wide range of temperatures. It is also suitable for use in ICs, amplifiers, and other linear circuits.

This transistor is formulated to work best with operating voltage ranges between 5V and 20V and currents between 1mA and 10mA. It features an allowable collector dissipation rating of 125mW, a collector-emitter voltage rating of 35V, an emitter-base voltage rating of 5V, and a maximum junction temperature of 150C. It is also extremely tolerant to thermal shock and has excellent tolerance to EMI.

The DDTD142JC-7-F is designed with a built-in bias circuit, which allows for quick and easy set up for the device. This circuit removes the need for a separate bias resistor or a bias network, saving space and cost. The device has a hFE between 20 and 80 and an open-collector power rating of 2W. It also has a long grounding pin, which helps to reduce radio frequency interference and improve EMI performance.

The DDTD142JC-7-F primarily functions as a switch that open or closes, depending on the amount of current it is allowed to pass through the collector and emitter. When the collector and emitter are not allowed to pass current, the switch is closed and will remain closed no matter what voltage is applied. When current is allowed to flow, the transistor will switch from closed to open, depending on the base-emitter voltage that is applied.

The DDTD142JC-7-F transistor offers a number of advantages for both engineers and designers. It is highly reliable and features high speed switching with excellent linearity and low power requirements. Its built-in bias circuit also makes it ideal for quick, cost-effective setup of linear and digital circuits. Its built-in bias circuits also reduce noise and EMI, further improving efficiency and performance.

In conclusion, the DDTD142JC-7-F transistor is an excellent choice for a wide range of applications that require low voltage and moderate current. It features high performance, excellent tolerance to thermal shock, and has a built-in bias circuit that helps reduce noise and EMI, making it an ideal choice for linear and digital circuits.

The specific data is subject to PDF, and the above content is for reference

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