DDTD122TU-7 Discrete Semiconductor Products |
|
Allicdata Part #: | DDTD122TUDITR-ND |
Manufacturer Part#: |
DDTD122TU-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTD122TU-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.04823 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 5V |
Base Part Number: | DTD122 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Series: | -- |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A DDTD122TU-7 is a single, pre-biased transistor, commonly made of a variety of materials including bipolar junction transistors (BJT). It is specifically designed to provide a low input bias current, which provides excellent temperature stability and which can be used to obtain very high impedance values. It is commonly used in high voltage applications and in some more advanced applications, it is also used for pulse waveform generation, waveform control, and for high frequency signal conditioning. This article will discuss the application field and working principle of the DDTD122TU-7 single, pre-biased transistor.
The DDTD122TU-7 is specially designed to provide a low input bias current, which is necessary for high voltage applications. As the input bias current is low, the operating temperature of the transistor is kept stable, causing less power dissipation and improving the performance of the transistor. Additionally, the transistor has a wide input voltage range such that it can easily handle high voltage signals without any damage. This is particularly useful in applications that require high voltage input signals, as the device is able to accept a wide range of voltage levels without any loss. This also makes the device ideal for pulse waveform generation, allowing for precise control over pulse amplitudes.
The operating principle of the DDTD122TU-7 is based on the charge stored in its input node. The transistor is designed such that, upon each input signal, a portion of the charge at the input node is stored in the device. This process is repeated and the charges stored in the device act like a capacitor, allowing accurate waveforms to be generated. Additionally, the stored charge aids in controlling the frequency and amplitude of the generated waveforms, allowing precise signal conditioning.
The DDTD122TU-7 has a wide range of application fields. It is used in pulse waveform generation, which can greatly improve the accuracy of pulse amplitudes and signal frequencies. Furthermore, it is often used in high voltage applications, as its wide input voltage range ensures that the device is able to accept high voltage signals without any damage. Furthermore, it is used for waveform control, allowing for precise signal conditioning. Finally, it is often used in high frequency signal conditioning, as its low input bias current offers excellent temperature stability and its charge-storage capacitance ensures precise signal control.
In conclusion, the DDTD122TU-7 is a single, pre-biased transistor, commonly made of a variety of materials including bipolar junction transistors (BJT). Its main features are a low input bias current and wide input voltage range, allowing it to be used in applications such as pulse waveform generation, waveform control, and high frequency signal conditioning. Thanks to its charge-storage capacitance, it is able to generate precise waveforms and accurately control signal frequencies and amplitudes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
DDTD122TC-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD113ZC-7-F | Diodes Incor... | -- | 282000 | TRANS PREBIAS NPN 200MW S... |
DDTD142JC-7-F | Diodes Incor... | -- | 57000 | TRANS PREBIAS NPN 200MW S... |
DDTD142JU-7-F | Diodes Incor... | -- | 6000 | TRANS PREBIAS NPN 200MW S... |
DDTD133HC-7-F | Diodes Incor... | -- | 9000 | TRANS PREBIAS NPN 200MW S... |
DDTD114EC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142TU-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122TC-7-F | Diodes Incor... | 0.04 $ | 93000 | TRANS PREBIAS NPN 200MW S... |
DDTD122LU-7-F | Diodes Incor... | -- | 12000 | TRANS PREBIAS NPN 200MW S... |
DDTD142JU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142TU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142TC-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122TU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122LU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142TC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD113EC-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123YC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122TU-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114TU-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143TU-7-F | Diodes Incor... | -- | 3000 | TRANS PREBIAS NPN 200MW S... |
DDTD122LC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114GC-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114TC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122JC-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123EC-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143EC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143TC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD113EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD113ZU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114GU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122JU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123YU-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD133HU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123TU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123TC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122LC-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142JC-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...