DDTD123EC-7-F

Transistors - Bipolar (BJT) - Single, Pre-Biased

The DDTD123EC-7-F is a single pre-biased bipolar transistor designed for use in a wide range of low voltage, medium power applications. It is available in an ultra-compact SOT-723 package that allows for higher design integration and cost savings. The DDTD123EC-7-F utilizes an advanced self-alignment bipolar technology for back-to-back geometry and excellent voltage and current performance. It also offers superior thermal and electrical characteristics.

Applications

The DDTD123EC-7-F is optimized for low voltage applications and is suitable for a wide number of applications, including:

• Switching applications
• DC/DC converters
• DC/AC converters
• Battery powered circuits
• Regulator circuits
• Optic transceivers

Working principle

The DDTD123EC-7-F utilizes a self-aligned bipolar structure which greatly improves its voltage and current performance. In this structure, the emitter-base junction is offset to one side of the structure and the collector-base junction is offset to the other side. This allows the transistor to conduct in both forward and reverse directions. The collector terminal controls the base current which in turn controls the emitter-collector current.

The DDTD123EC-7-F can be used with very low supply voltages while still delivering high current gains. It is also very efficient in terms of power consumption, allowing for increased battery life and reduced package sizes. Furthermore, its small footprint and low power consumption make it an ideal choice for higher density applications.