DDTD122TC-7 Allicdata Electronics

DDTD122TC-7 Discrete Semiconductor Products

Allicdata Part #:

DDTD122TCDITR-ND

Manufacturer Part#:

DDTD122TC-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD122TC-7 datasheetDDTD122TC-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Base Part Number: DTD122
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Base (R1): 220 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTD122TC-7 is a single, pre-biased bipolar junction transistor (BJT). It is a four-layer, planar transistor, with a base layer that is fully isolated from the gate and the other two layers. The isolation of the base makes it ideal for use in high voltage applications, as it eliminates the need for multiple layers to be built up and linked together to achieve the required isolation.

The base layer is biased with a resistor that sets the breakdown voltage at which the transistor will activate. This pre-biasing ensures that the transistor will not be switched on until a certain voltage is present. This can be used to prevent circuit overload or inrush current.

The DDTD122TC-7 has a wide range of applications, including power supplies, amplifiers, and motor control. It is also well-suited to use in AC-DC switching applications due to its fast switching ability. The high isolation between layers also make it ideal for use in harsh environments, where it will be exposed to dirt, vibration and moisture.

The working principle of the DDTD122TC-7 is based on the flow of charge carriers through the transistor. When a voltage is applied to the base layer, it creates a channel between the collector and the emitter. This allows current to flow from the collector to the emitter, producing a current gain. As the current passes through the transistor, the C-E voltage decreases, causing the transistor to saturate and the current to flow freely.

The DDTD122TC-7 can be used in low-side and high-side driver applications, or as a battery charger and motor control switch. It is also suitable for use in automotive applications, as it is capable of withstanding large reverse voltage spikes without permanent damage. The DDTD122TC-7 is a versatile and reliable transistor, suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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