Allicdata Part #: | DDTD114TC-7-F-ND |
Manufacturer Part#: |
DDTD114TC-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTD114TC-7-F Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | DTD114 |
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The DDTD114TC-7-F is a single, pre-biased, Bipolar Junction Transistor (BJT) specifically designed for applications requiring high power switching and fast switching. It is a low voltage, high current device that has the capability to withstand up to 40V DC. As such, it is an ideal choice for applications such as DC-DC converters, power supplies, batteries, and automotive electronics.
This BJT is a PNP transistor, with an emitters-collector breakdown voltage of 40V and a collector-emitter breakdown of 200V. It is also capable of a maximum junction temperature of 200°C and an operating temperature range of -55°C to +125°C. The DC current gain (hFE) of the DDTD114TC-7-F is a maximum of 150 at a collector current of 1mA.
The DDTD114TC-7-F is a general-purpose power transistor. It provides ideal switching capabilities with superior reliability and excellent thermal performance. It also offers a relatively low saturation voltage of 0.2V and an operating frequency of up to 200MHz. Additionally, the DDTD114TC-7-F is suitable for switching heavy loads with very low losses.
The working principle of the DDTD114TC-7-F is fairly simple. At the heart of the transistor is a base, a collector and an emitter. The collector is kept at a constant potential while the emitter is supplied with the required base current. This causes the transistor to switch between a non-conducting and a conducting state, thus allowing it to act as a switch.The base voltage and current determine the amount of current that can be switched through the device.
The DDTD114TC-7-F is suitable for a wide range of application including switching applications, power control and signal amplification. Some of the most common applications are in motor control, power supplies, load switching, audio amplifiers, voltage regulators and digital circuits. It is also suitable for use in automotive, telecommunications and computer applications.
The DDTD114TC-7-F is a reliable, low voltage, high current transistor that is suitable for many different applications requiring high power switching and fast switching. Its wide operating temperature range, low saturation voltage and excellent thermal performance make it an ideal choice for a wide range of applications. The DDTD114TC-7-F is an ideal choice for applications that require reliable and fast switching capabilities.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DDTD113ZC-7-F | Diodes Incor... | -- | 282000 | TRANS PREBIAS NPN 200MW S... |
DDTD142JC-7-F | Diodes Incor... | -- | 57000 | TRANS PREBIAS NPN 200MW S... |
DDTD142JU-7-F | Diodes Incor... | -- | 6000 | TRANS PREBIAS NPN 200MW S... |
DDTD133HC-7-F | Diodes Incor... | -- | 9000 | TRANS PREBIAS NPN 200MW S... |
DDTD114EC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142TU-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122TC-7-F | Diodes Incor... | 0.04 $ | 93000 | TRANS PREBIAS NPN 200MW S... |
DDTD122LU-7-F | Diodes Incor... | -- | 12000 | TRANS PREBIAS NPN 200MW S... |
DDTD142JU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142TU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD142TC-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122TU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122LU-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
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DDTD114TU-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143TU-7-F | Diodes Incor... | -- | 3000 | TRANS PREBIAS NPN 200MW S... |
DDTD122LC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114GC-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114TC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122JC-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123EC-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143EC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143TC-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD113EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD113ZU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD114GU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD122JU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123YU-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD133HU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD143EU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTD123TU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
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