Allicdata Part #: | DMC3018LSD-13-ND |
Manufacturer Part#: |
DMC3018LSD-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V 9.1A/6A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 9.1A, 6A 2.5W Sur... |
DataSheet: | DMC3018LSD-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9.1A, 6A |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6.9A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 631pF @ 15V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The DMC3018LSD-13 is a type of three-level MOS operational transistor array technology. It is one of the most popular and widely used MOS transistors. It features a wide operating voltage range and high current drive capability. It also has low on-resistance as well as excellent temperature stability. This technology provides a great solution for high-voltage and high-current applications like power transistors, power switching, and power conversion.
In order to understand how this technology works, let\'s first look at the components of a MOS transistor array. The DMC3018LSD-13 is composed of two MOS transistors, a gate and a drain-source. The gate is responsible for controlling the current flow between the drain and the source. The drain-source connects the source and the drain together, allowing for current to flow between them. The gate is connected to the drain-source via a metal-oxide-semiconductor layer, which controls the current flow.
The DMC3018LSD-13 technology utilizes a three-level arrangement so that each transistor is controlled independently. This technology separates the transistor\'s operations into three distinct levels: the ground, the gate, and the drain-source. This arrangement allows the user to independently control the current flow between the drain and the source. For example, this arrangement can be used to toggle the power between two transistors. By using this arrangement, the power flow is independent of the input/output voltages.
To maximize the performance of the DMC3018LSD-13, the gate-source voltage needs to be controlled carefully. This is known as the gate drive voltage. The gate drive voltage is generally kept as low as possible to reduce the on-resistance of the transistors. The gate drive voltage can be adjusted with the help of a voltage regulator. This helps to ensure optimum performance and longevity of the transistors.
The DMC3018LSD-13 technology is widely used for power transistors, power switching, and power conversion. It is a cost-effective and reliable solution for high-voltage and high-current applications. These applications require adequate on-resistance as well as excellent temperature stability. With its three-level arrangement and adjustable gate drive voltage, the DMC3018LSD-13 is an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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