DMC3026LSD-13 Allicdata Electronics

DMC3026LSD-13 Discrete Semiconductor Products

Allicdata Part #:

DMC3026LSD-13DITR-ND

Manufacturer Part#:

DMC3026LSD-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 30V 6.5A/6.2A 8SO
More Detail: Mosfet Array N and P-Channel 30V 6.5A, 6.2A 1.2W S...
DataSheet: DMC3026LSD-13 datasheetDMC3026LSD-13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 6.2A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The DMC3026LSD-13 is a type of FET array made for use with high-speed analog and digital applications. Its main purpose is for applications such as line drivers, buffers, and DACs. FET arrays are important components for integrated circuits because they enable faster switching speeds, better noise immunity, and higher input and output impedance than discrete components.

The DMC3026LSD-13 has a maximum current rating of 26 A, and a voltage rating of 50 V. Its power dissipation rating is 400 mW, and its total gate charge is 14 nC. The drain–source breakdown voltage is 120 V, and the on-resistance is 25 mΩ. It also has low output capacitance, high frequency operation, and excellent thermal stability.

The DMC3026LSD-13 is a two-channel FET array with four N-channel power MOSFETs. It has separated drain contacts, allowing each MOSFET to be used separately as an independent device. It also has an extremely low input and output capacitance, and its high speed operation makes it well-suited for switching applications.

The working principle of the DMC3026LSD-13 is based on the basic principles of FETs. FETs, or Field-Effect Transistors, are the most commonly used kind of semiconductor because of their low input currents, high switching speeds, and low power dissipation. They are widely used in computers, communications, and consumer electronics because of their simple construction and ability to handle large voltage and current levels.

In a FET, there is an electric field that is created by an input voltage. When the input voltage increases, the electric field also increases. This in turn increases the voltage drop across the FET\'s drain-source region, which causes a current to flow through the device. The controlled current flow through the FET is the basis of its operation.

When the DMC3026LSD-13 is used in line driver and buffer applications, the FETs are arranged in arrays. This allows multiple FETs to be connected in series to form a single device. The current flowing through the array is then used to switch on and off the output of the line driver or buffer. This results in improved performance and faster switching speeds.

In DAC (Digital-to-Analog Converter) applications, the DMC3026LSD-13 is used to convert digital data into an analog output signal. The FET array is used to convert data from a digital format into an analog format, with each FET forming the switching element for a single bit of information. This allows DACs to convert digital information into an analog output signal quickly and accurately.

The DMC3026LSD-13 is a versatile FET array that is used in a wide range of applications. Its low input and output capacitance, high frequency operation, and excellent thermal stability make it well-suited for line driver and DAC applications. In addition, its ability to handle high voltage and current levels makes it a valuable tool for many switching applications.

The specific data is subject to PDF, and the above content is for reference

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