Allicdata Part #: | DMC3025LDV-7-ND |
Manufacturer Part#: |
DMC3025LDV-7 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 15A POWERDI3333-8 |
More Detail: | Mosfet Array N and P-Channel 15A (Tc) Surface Mo... |
DataSheet: | DMC3025LDV-7 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.16149 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 4.5V, 9.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 15V, 1188pF @ 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
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The DMC3025LDV-7 is an array of 3 N-Channel Enhancement Mode Field Effect Transistors (FETs) manufactured by Toshiba. The device consists of three 25V FETs in parallel, each with its own gate and source combination. Each FET contains a gate input, a gate-collector junction, and a gate-drain junction. This device is optimized for power control applications, allowing for faster switching and higher efficiency.
The DMC3025LDV-7 can be used in a variety of applications including motor control, LED lighting, variable speed fan controllers, and power switches. The device is also commonly used in high frequency switching applications. The power dissipation rating of the device is 20W, and the maximum operating temperature is 150C. The maximum drain-source voltage is 25V, and the allowable current range is up to 10A.
The working principle of the DMC3025LDV-7 is relatively simple. When a gate voltage is applied, it polarizes the gate, creating an electric field. This electric field then causes a depletion region at the semiconductor-gate interface and the drain. This depletion region reduces the electron flow from the semiconductor substrate to the drain by a certain amount, depending on the gate to drain voltage and the gate to source voltage.
When the gate voltage is increased, the electric field increases and the depletion region thickens, allowing less current to flow from the source to the drain. By controlling the gate voltage (which can be done using an external circuit or power supply) the current passing through the device can be increased or decreased. This makes it an effective power control tool.
The DMC3025LDV-7 is a versatile power control device and can be used in a variety of applications. The device can be used to control motor speeds, fan speeds, and power switches. It can also be used in high frequency switching applications. The device is simple to use and can be controlled using an external power supply, making it a cost-effective solution for power control.
The specific data is subject to PDF, and the above content is for reference
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