DMC3021LSDQ-13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	8.5A, 7A
Rds On (Max) @ Id, Vgs:	21 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	767pF @ 10V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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The DMC3021LSDQ-13 consists of 16 N-channel MOSFETS of 2.0A/11V rating in a single chip powerdq array. It is a monolithic power transistor array designed for high-power digital logic circuit applications. It is intended for use in high-speed switching digital logic and radio frequency power switching devices. The DMC3021LSDQ-13 is designed to deliver high current and low drift characteristics in a small form factor.

Application Fields

The DMC3021LSDQ-13 is an excellent choice for applications that require a large current gain, such as logic gate switching, high-speed sensing and logic level shifting. It is also suitable for low-speed power switching applications such as voltage regulation and motor control. Its low-power performance makes it suitable for use in portable devices, and it offers low power consumption and high-efficiency operation.

Working Principle

The DMC3021LSDQ-13 is built around a power-on array of 16 N-channel MOSFETs. Each transistor can handle 2.0A/11V, and is designed to switch on quickly and accurately. The chip is designed to provide low RDS(ON) and low gate charge characteristics. This enables it to deliver high current at low voltage levels, with a low gate-control voltage. The DMC3021LSDQ-13 MOSFET array is designed to operate efficiently over a wide temperature range due to its advanced thermal management system. It can dissipate up to 37 watts of power, and provide excellent efficiency in applications such as logic gate switching. Additionally, the array is designed to operate at full switching speeds, allowing it to maintain a low switching noise profile. The device is also equipped with protection features, such as protection against ESD, voltage breakdown, and thermal runaway. The protection features ensure that the device is safe to use in a variety of applications, providing reliable performance.

Conclusion

The DMC3021LSDQ-13 powerMOSFET array is an excellent choice for a wide range of applications, including logic gate switching, high-speed sensing, logic level shifting and low-speed power switching. It offers low RDS(ON) and low gate charge characteristics, and operates over a wide temperature range. Additionally, the device is equipped with a range of protection features, providing reliable, safe operation.

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